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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD10P03LSM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 1492 |
|
| RFD10P03LSM9A | Fairchild Semiconductor Corporation | 2295 | ||
| RFD10P03LSM9A | Harris Semiconductor | Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | Europe - 10000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RFD10P03LSM OMO.#: OMO-RFD10P03LSM |
MOSFET TO-252AA P-Ch Power |
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Mfr.#: RFD10P03LSM |
MOSFET P-CH 30V 10A TO-252AA |
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Mfr.#: RFD10P03LSM9A OMO.#: OMO-RFD10P03LSM9A-1190 |
Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Mfr.#: RFD10P03LSM9A(FDD5614P) |
Neu und Original |