PartNumber | RFD10P03LSM | RFD10P03 | RFD10P03L |
Description | MOSFET TO-252AA P-Ch Power | MOSFET TO-251 P-Ch Powe | |
Manufacturer | ON Semiconductor | HARRIS | FSC |
Product Category | MOSFET | IC Chips | IC Chips |
RoHS | N | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 10 A | - | - |
Rds On Drain Source Resistance | 200 mOhms | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 65 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Height | 2.39 mm | - | - |
Length | 6.73 mm | - | - |
Transistor Type | 1 P-Channel | - | - |
Width | 6.22 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Fall Time | 20 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 50 ns | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 35 ns | - | - |
Typical Turn On Delay Time | 15 ns | - | - |
Unit Weight | 0.139332 oz | - | - |