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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIHFR1N60A-GE3 DISTI # V36:1790_09218418 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK RoHS: Compliant | 0 |
|
| SIHFR1N60A-GE3 DISTI # SIHFR1N60A-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 1.4A TO252AA RoHS: Not compliant Min Qty: 1 Container: Tube | 3000In Stock |
|
| SIHFR1N60A-GE3 DISTI # SIHFR1N60A-GE3 | Vishay Intertechnologies | MOS Power Transistors HV (>= 200V) (Alt: SIHFR1N60A-GE3) RoHS: Compliant Min Qty: 1 | Europe - 4425 |
|
| SIHFR1N60A-GE3 DISTI # SIHFR1N60A-GE3 | Vishay Intertechnologies | MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: SIHFR1N60A-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIHFR1N60A-GE3 DISTI # 78-SIHFR1N60A-GE3 | Vishay Intertechnologies | MOSFET 600V Vds TO-252 DPAK RoHS: Compliant | 907 |
|
| SIHFR1N60A-GE3 DISTI # SIHFR1N60A-GE3 | Vishay Intertechnologies | Transistor: N-MOSFET,unipolar,600V,0.98A,36W,DPAK | 147 |
|
| SIHFR1N60A-GE3 DISTI # XSKDRABV0026536 | Vishay Intertechnologies | Switching Controller RoHS: Compliant | 3525 in Stock0 on Order |
|
| SIHFR1N60AGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SIHFR1N60ATR-GE3 OMO.#: OMO-SIHFR1N60ATR-GE3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
|
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Mfr.#: SIHFR1N60A-GE3 OMO.#: OMO-SIHFR1N60A-GE3 |
MOSFET 600V Vds TO-252 DPAK |
|
Mfr.#: SIHFR1N60A OMO.#: OMO-SIHFR1N60A-1190 |
Neu und Original |
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Mfr.#: SIHFR1N60A-GE3 OMO.#: OMO-SIHFR1N60A-GE3-VISHAY |
MOSFET N-CH 600V 1.4A TO252AA |
|
|
Mfr.#: SIHFR1N60AGE3 OMO.#: OMO-SIHFR1N60AGE3-1190 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
|
|
Mfr.#: SIHFR1N60ATR-GE3 OMO.#: OMO-SIHFR1N60ATR-GE3-VISHAY |
MOSFET N-CH 600V 1.4A TO252AA |