BSC009NE2LS5IATMA1

Mfr. #:: BSC009NE2LS5IATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET LV POWER MOS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC009NE2LS5IATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
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Mehr Informationen:: BSC009NE2LS5IATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Tags: BSC009NE2LS5, BSC009, BSC00, BSC0, BSC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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BSC009NE2LS5IATMA1 Beschreibung

***ure Electronics: Single N-Channel 25 V 0.9 mOhm 36 nC OptiMOS Power Mosfet - TDSON-8

***ical: Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R

***Components: On a Reel of 5000, Infineon BSC009NE2LS5IATMA1 MOSFET

***i-Key: MOSFET N-CH 25V 40A 8TDSON IND

***ineon: With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse

BSC009NE2LS5IATMA1 Mehr Informationen

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC009NE2LS5IATMA1 DISTI # V72:2272_06383632	Infineon Technologies AG	Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R RoHS: Compliant	0
BSC009NE2LS5IATMA1 DISTI # V36:1790_06383632	Infineon Technologies AG	Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R RoHS: Compliant	0
BSC009NE2LS5IATMA1 DISTI # BSC009NE2LS5IATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 25V 40A 8TDSON IND RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	10000:$0.9240 5000:$0.9438
BSC009NE2LS5IATMA1 DISTI # BSC009NE2LS5IATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 25V 40A 8TDSON IND RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.0843 500:$1.3086 100:$1.5928 10:$1.9820 1:$2.2100
BSC009NE2LS5IATMA1 DISTI # BSC009NE2LS5IATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 40A 8TDSON IND RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.0843 500:$1.3086 100:$1.5928 10:$1.9820 1:$2.2100
BSC009NE2LS5IATMA1 DISTI # BSC009NE2LS5IATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC009NE2LS5IATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.8379 30000:$0.8529 20000:$0.8829 10000:$0.9159 5000:$0.9509
BSC009NE2LS5IATMA1 DISTI # SP001212434	Infineon Technologies AG	Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R (Alt: SP001212434) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.7179 30000:€0.7689 20000:€0.8279 10000:€0.8969 5000:€1.0769
BSC009NE2LS5IATMA1 DISTI # 13AC8323	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):800µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power DissipationRoHS Compliant: Yes	5477	1000:$0.9670 500:$1.1600 250:$1.2500 100:$1.3300 50:$1.4400 25:$1.5600 10:$1.6700 1:$1.9600
BSC009NE2LS5IATMA1 DISTI # 726-BSC009NE2LS5IATM	Infineon Technologies AG	MOSFET LV POWER MOS RoHS: Compliant	0	1:$1.9400 10:$1.6500 100:$1.3200 500:$1.1500 1000:$0.9570 2500:$0.8920 5000:$0.8590
BSC009NE2LS5IATMA1 DISTI # 1336577	Infineon Technologies AG	MOSFET OPTIMOS5 25V 100A 0.95M SUPERSO8, RL	7970	15000:£0.6920 5000:£0.7100
BSC009NE2LS5IATMA1 DISTI # 1339881	Infineon Technologies AG	MOSFET OPTIMOS5 25V 100A 0.95M SUPERSO8, PK	1320	2500:£0.8360 1250:£0.9720 250:£1.1080 50:£1.2500 5:£1.5240
BSC009NE2LS5IATMA1 DISTI # 2725800	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant	5477	1000:$1.6600 500:$1.9900 100:$2.5500 10:$3.1800 1:$3.5200
BSC009NE2LS5IATMA1 DISTI # 2725800	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON	8476	500:£0.9090 250:£0.9750 100:£1.0400 25:£1.3200 5:£1.4300

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSC009NE2LSATMA1 OMO.#: OMO-BSC009NE2LSATMA1	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5IATMA1 OMO.#: OMO-BSC009NE2LS5IATMA1	MOSFET LV POWER MOS
	Mfr.#: BSC009NE2LS5ATMA1 OMO.#: OMO-BSC009NE2LS5ATMA1	MOSFET LV POWER MOS
	Mfr.#: BSC009NE2LSXT OMO.#: OMO-BSC009NE2LSXT	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS OMO.#: OMO-BSC009NE2LS-1190	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5 OMO.#: OMO-BSC009NE2LS5-1190	Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R (Alt: BSC009NE2LS5)
	Mfr.#: BSC009NE2LS5I OMO.#: OMO-BSC009NE2LS5I-1190	Neu und Original
	Mfr.#: BSC009NE2LSXT OMO.#: OMO-BSC009NE2LSXT-126	IGBT Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5IATMA1 OMO.#: OMO-BSC009NE2LS5IATMA1-INFINEON-TECHNOLOGIES	MOSFET LV POWER MOS
	Mfr.#: BSC009NE2LS5ATMA1 OMO.#: OMO-BSC009NE2LS5ATMA1-INFINEON-TECHNOLOGIES	MOSFET LV POWER MOS

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von BSC009NE2LS5IATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,22 $~~; ~~1,22 $~~

10: ~~1,16 $~~; ~~11,62 $~~

100: ~~1,10 $~~; ~~110,13 $~~

500: ~~1,04 $~~; ~~520,05 $~~

1000: ~~0,98 $~~; ~~979,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

BSC009NE2LS5 4
BSC009 7
BSC00 8
BSC0 601
BSC 999

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BSC009NE2LS5IATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes