OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

BSC009NE2LS5ATMA1

BSC009NE2LS5ATMA1
Mfr. #:
BSC009NE2LS5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC009NE2LS5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC009NE2LS5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
BSC009NE2LS5 SP001212764
Montageart
SMD/SMT
Paket-Koffer
TDSON-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Pd-Verlustleistung
74 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
4 ns
Anstiegszeit
6 ns
Vgs-Gate-Source-Spannung
+/- 16 V
ID-Dauer-Drain-Strom
100 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Source-Threshold-Voltage
1.2 V
Rds-On-Drain-Source-Widerstand
1.25 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
30 ns
Typische-Einschaltverzögerungszeit
4 ns
Qg-Gate-Ladung
20 nC
Vorwärts-Transkonduktanz-Min
75 S
Kanal-Modus
Erweiterung
Tags
BSC009NE2LS5, BSC009, BSC00, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 0.9 mOhm 43 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R
***Components
On a Reel of 5000, Infineon BSC009NE2LS5ATMA1 MOSFET
***ronik
N-CH 25V 100A 900mOhm SuperSO8
***ineon
With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSC009NE2LS5ATMA1
DISTI # V72:2272_06383674		Infineon Technologies AGTrans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R
RoHS: Compliant		479
  • 250:$1.0397
  • 100:$1.1552
  • 25:$1.2967
  • 10:$1.4408
  • 1:$1.8652
BSC009NE2LS5ATMA1
DISTI # V36:1790_06383674		Infineon Technologies AGTrans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R
RoHS: Compliant		0
    BSC009NE2LS5ATMA1
    DISTI # BSC009NE2LS5ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 25V 41A 8TDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		186In Stock
    • 1000:$0.9571
    • 500:$1.1552
    • 100:$1.4060
    • 10:$1.7490
    • 1:$1.9500
    BSC009NE2LS5ATMA1
    DISTI # BSC009NE2LS5ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 25V 41A 8TDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		186In Stock
    • 1000:$0.9571
    • 500:$1.1552
    • 100:$1.4060
    • 10:$1.7490
    • 1:$1.9500
    BSC009NE2LS5ATMA1
    DISTI # BSC009NE2LS5ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 25V 41A 8TDSON
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)    		On Order
    • 10000:$0.8156
    • 5000:$0.8331
    BSC009NE2LS5ATMA1
    DISTI # 33368664    		Infineon Technologies AGTrans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R
    RoHS: Compliant    		5000
    • 5000:$0.8408
    BSC009NE2LS5ATMA1
    DISTI # 30729226    		Infineon Technologies AGTrans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R
    RoHS: Compliant    		479
    • 500:$1.0169
    • 250:$1.0397
    • 100:$1.1552
    • 25:$1.2967
    • 10:$1.4408
    • 9:$1.6957
    BSC009NE2LS5ATMA1
    DISTI # BSC009NE2LS5ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 25V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC009NE2LS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 50000:$0.7399
    • 30000:$0.7529
    • 20000:$0.7789
    • 10000:$0.8089
    • 5000:$0.8389
    BSC009NE2LS5ATMA1
    DISTI # SP001212764    		Infineon Technologies AGTrans MOSFET N-CH 25V 100A 8-Pin TDSON T/R (Alt: SP001212764)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 50000:€0.6629
    • 30000:€0.7139
    • 20000:€0.7729
    • 10000:€0.8439
    • 5000:€1.0309
    BSC009NE2LS5ATMA1
    DISTI # 13AC8322    		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):750µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power DissipationRoHS Compliant: Yes10401
    • 1000:$0.8530
    • 500:$1.0300
    • 250:$1.1000
    • 100:$1.1700
    • 50:$1.2700
    • 25:$1.3700
    • 10:$1.4600
    • 1:$1.7300
    BSC009NE2LS5ATMA1
    DISTI # 726-BSC009NE2LS5ATMA    		Infineon Technologies AGMOSFET LV POWER MOS
    RoHS: Compliant    		0
    • 1:$1.7100
    • 10:$1.4500
    • 100:$1.1600
    • 500:$1.0200
    • 1000:$0.8450
    • 2500:$0.7870
    • 5000:$0.7580
    • 10000:$0.7290
    BSC009NE2LS5ATMA1
    DISTI # 1336576    		Infineon Technologies AGMOSFET OPTIMOS5 25V 100A 0.9M SUPERSO8, RL8265
    • 15000:£0.6170
    • 5000:£0.6430
    BSC009NE2LS5ATMA1
    DISTI # 2725799    		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON
    RoHS: Compliant    		10401
    • 1000:$1.4600
    • 500:$1.7600
    • 100:$2.2600
    • 10:$2.8100
    • 1:$3.1100
    BSC009NE2LS5ATMA1
    DISTI # 2725799    		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON10401
    • 500:£0.7000
    • 250:£0.7470
    • 100:£0.7940
    • 25:£0.9990
    • 5:£1.1000
    Bild Teil # Beschreibung
    BSC009NE2LS

    Mfr.#: BSC009NE2LS

    OMO.#: OMO-BSC009NE2LS

    		 MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    BSC009NE2LSATMA1

    Mfr.#: BSC009NE2LSATMA1

    OMO.#: OMO-BSC009NE2LSATMA1

    		 MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    BSC009NE2LS5IATMA1

    Mfr.#: BSC009NE2LS5IATMA1

    OMO.#: OMO-BSC009NE2LS5IATMA1

    		 MOSFET LV POWER MOS
    BSC009NE2LS5ATMA1

    Mfr.#: BSC009NE2LS5ATMA1

    OMO.#: OMO-BSC009NE2LS5ATMA1

    		 MOSFET LV POWER MOS
    BSC009NE2LSXT

    Mfr.#: BSC009NE2LSXT

    OMO.#: OMO-BSC009NE2LSXT

    		 MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    BSC009NE2LS

    Mfr.#: BSC009NE2LS

    OMO.#: OMO-BSC009NE2LS-1190

    		 MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    BSC009NE2LS5I

    Mfr.#: BSC009NE2LS5I

    OMO.#: OMO-BSC009NE2LS5I-1190

    		 Neu und Original
    BSC009NE2LSATMA1

    Mfr.#: BSC009NE2LSATMA1

    OMO.#: OMO-BSC009NE2LSATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 25V 41A TDSON-8
    BSC009NE2LS5IATMA1

    Mfr.#: BSC009NE2LS5IATMA1

    OMO.#: OMO-BSC009NE2LS5IATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET LV POWER MOS
    BSC009NE2LS5ATMA1

    Mfr.#: BSC009NE2LS5ATMA1

    OMO.#: OMO-BSC009NE2LS5ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET LV POWER MOS
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von BSC009NE2LS5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,09 $
    1,09 $
    10
    1,04 $
    10,39 $
    100
    0,98 $
    98,42 $
    500
    0,93 $
    464,75 $
    1000
    0,87 $
    874,80 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    More Newest Products
    Top