BSC009NE2LSATMA1

Mfr. #:: BSC009NE2LSATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 25V 41A TDSON-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC009NE2LSATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: BSC009, BSC00, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC009NE2LSATMA1 Beschreibung

***ure Electronics: N-Channel 25 V 0.9 mOhm OptiMOS Power-MOSFET - PG-TDSON-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; On Resistance Rds(On):750Μohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

***ineon: With the new OptiMOS 25V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and Hot-swap application. Super-SO8 package has a standard footprint that allows thinner and smaller application solutions compared to the IPB009N03LS. | Summary of Features: Lowest on-state resistance; High DC and pulsed current capability; Easy to design-in | Benefits: Increased battery lifetime/system efficiency; Saving space (reducing the number of devices needed); Saving costs | Target Applications: Or-ing in power supply; Hot-swap; e-fuse; Battery management

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC009NE2LSATMA1 DISTI # V72:2272_06383247	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	6117	6000:$0.6842 3000:$0.7603 1000:$0.8447 500:$0.9933 250:$1.0734 100:$1.1928 25:$1.4575 10:$1.4868 1:$1.9144
BSC009NE2LSATMA1 DISTI # V36:1790_06383247	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	0	5000:$0.6989
BSC009NE2LSATMA1 DISTI # BSC009NE2LSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 25V 41A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	17128In Stock	1000:$0.9409 500:$1.1356 100:$1.3822 10:$1.7200 1:$1.9100
BSC009NE2LSATMA1 DISTI # BSC009NE2LSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 41A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	17128In Stock	1000:$0.9409 500:$1.1356 100:$1.3822 10:$1.7200 1:$1.9100
BSC009NE2LSATMA1 DISTI # BSC009NE2LSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 25V 41A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	15000In Stock	10000:$0.7980 5000:$0.8190
BSC009NE2LSATMA1 DISTI # 31970309	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	6117	10:$1.9144
BSC009NE2LSATMA1 DISTI # 33111756	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$0.5822
BSC009NE2LSATMA1 DISTI # 33960889	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	3500	80:$0.9662
BSC009NE2LSATMA1 DISTI # SP000893362	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP (Alt: SP000893362) RoHS: Compliant Min Qty: 5000	Europe - 10000	50000:€0.5529 30000:€0.5959 20000:€0.6459 10000:€0.7039 5000:€0.8609
BSC009NE2LSATMA1 DISTI # BSC009NE2LSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP - Tape and Reel (Alt: BSC009NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.6089 30000:$0.6199 20000:$0.6419 10000:$0.6659 5000:$0.6909
BSC009NE2LSATMA1 DISTI # 50Y1791	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP - Product that comes on tape, but is not reeled (Alt: 50Y1791) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0
BSC009NE2LSATMA1 DISTI # 50Y1791	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):750µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes	3500	1000:$0.8790 500:$1.0600 250:$1.1400 100:$1.2100 50:$1.3100 25:$1.4100 10:$1.5200 1:$1.7800
BSC009NE2LSATMA1. DISTI # 29AC2868	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):750µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:2.5W,No. of Pins:8Pins RoHS Compliant: Yes	0	50000:$0.6090 30000:$0.6200 20000:$0.6420 10000:$0.6660 1:$0.6910
BSC009NE2LS DISTI # 726-BSC009NE2LS	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	10086	1:$1.7600 10:$1.5000 100:$1.2000 500:$1.0500 1000:$0.8700
BSC009NE2LSATMA1 DISTI # 726-BSC009NE2LSATMA	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	9488	1:$1.7600 10:$1.5000 100:$1.2000 500:$1.0500 1000:$0.8700
BSC009NE2LSXT DISTI # 726-BSC009NE2LSATMA1	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	0	5000:$0.7810 10000:$0.7500
BSC009NE2LSATMA1 DISTI # 9064441P	Infineon Technologies AG	MOSFET N-CHANNEL 25V 41A OPTIMOS TSDSON8, RL	3240	2500:£0.5810 1000:£0.6230 500:£0.7580 100:£0.8600
BSC009NE2LSATMA1 DISTI # 2480703	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8	17967	500:£0.8090 250:£0.8680 100:£0.9260 10:£1.1900 1:£1.5500
BSC009NE2LSATMA1 DISTI # 2480703RL	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant	0	5000:$1.3200 1000:$1.3400 500:$1.6200 100:$1.8500 10:$2.3100 1:$2.7100
BSC009NE2LSATMA1 DISTI # 2480703	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant	23278	5000:$1.3200 1000:$1.3400 500:$1.6200 100:$1.8500 10:$2.3100 1:$2.7100

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSC009NE2LS OMO.#: OMO-BSC009NE2LS	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LSATMA1 OMO.#: OMO-BSC009NE2LSATMA1	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5IATMA1 OMO.#: OMO-BSC009NE2LS5IATMA1	MOSFET LV POWER MOS
	Mfr.#: BSC009NE2LS5ATMA1 OMO.#: OMO-BSC009NE2LS5ATMA1	MOSFET LV POWER MOS
	Mfr.#: BSC009NE2LSXT OMO.#: OMO-BSC009NE2LSXT	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS OMO.#: OMO-BSC009NE2LS-1190	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5 OMO.#: OMO-BSC009NE2LS5-1190	Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R (Alt: BSC009NE2LS5)
	Mfr.#: BSC009NE2LSATMA1 OMO.#: OMO-BSC009NE2LSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 41A TDSON-8
	Mfr.#: BSC009NE2LSXT OMO.#: OMO-BSC009NE2LSXT-126	IGBT Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5ATMA1 OMO.#: OMO-BSC009NE2LS5ATMA1-INFINEON-TECHNOLOGIES	MOSFET LV POWER MOS

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von BSC009NE2LSATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,91 $~~; ~~0,91 $~~

10: ~~0,87 $~~; ~~8,68 $~~

100: ~~0,82 $~~; ~~82,20 $~~

500: ~~0,78 $~~; ~~388,15 $~~

1000: ~~0,73 $~~; ~~730,70 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

BSC009 7
BSC00 8
BSC0 601
BSC 999

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BSC009NE2LSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes