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| PartNumber | BSC009NE2LS5IATMA1 | BSC009NE2LS5ATMA1 |
| Description | MOSFET LV POWER MOS | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V |
| Id Continuous Drain Current | 100 A | 100 A |
| Rds On Drain Source Resistance | 950 uOhms | 1.25 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 16 V |
| Qg Gate Charge | 36 nC | 20 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 74 W | 74 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm |
| Series | OptiMOS 5 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 75 S | 75 S |
| Fall Time | 4 ns | 4 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 5 ns | 6 ns |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | 30 ns |
| Typical Turn On Delay Time | 5 ns | 4 ns |
| Part # Aliases | BSC009NE2LS5I SP001212434 | BSC009NE2LS5 SP001212764 |
| Unit Weight | 0.003527 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC009NE2LS5IATMA1 | MOSFET LV POWER MOS | |
| BSC009NE2LS5ATMA1 | MOSFET LV POWER MOS | ||
| BSC009NE2LS5IATMA1 | MOSFET LV POWER MOS | ||
| BSC009NE2LS5ATMA1 | MOSFET LV POWER MOS | ||
| BSC009NE2LS5 | Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R (Alt: BSC009NE2LS5) | ||
| BSC009NE2LS5I | Neu und Original |