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STU7N60M2

STU7N60M2
Mfr. #:
STU7N60M2
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STU7N60M2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STU7N60M2 Mehr Informationen STU7N60M2 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
5 A
Rds On - Drain-Source-Widerstand:
860 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
8.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
60 W
Aufbau:
Single
Handelsname:
MDmesh
Verpackung:
Rohr
Serie:
STU7N60M2
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
15.9 ns
Produktart:
MOSFET
Anstiegszeit:
7.2 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19.3 ns
Typische Einschaltverzögerungszeit:
7.6 ns
Gewichtseinheit:
0.139332 oz
Tags
STU7N6, STU7N, STU7, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmeshII plus 600V 4.5A
*** Electronic Components
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 600V, 4.5A, IPAK, Tube
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***p One Stop Global
Trans MOSFET N-CH 650V 4.4A 3-Pin(3+Tab) TO-251 Tube
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO251-3, RoHS
***nell
MOSFET, N-CH, 600V, 4.4A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.86ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 37W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***et
Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251
***ineon SCT
Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7, PG-TO251-3, RoHS
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***icroelectronics
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***el Electronic
STMICROELECTRONICS STU9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Teil # Mfg. Beschreibung Aktie Preis
STU7N60M2
DISTI # V72:2272_17702539		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		3000
  • 75000:$0.5386
  • 30000:$0.5477
  • 15000:$0.5570
  • 6000:$0.5662
  • 3000:$0.5943
  • 1000:$0.7314
  • 500:$0.7672
  • 250:$0.7801
  • 100:$0.8668
  • 50:$0.9082
  • 25:$1.0091
  • 10:$1.1213
  • 1:$1.4377
STU7N60M2
DISTI # V36:1790_06567884		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		0
  • 3000000:$0.4909
  • 1500000:$0.4913
  • 300000:$0.5389
  • 30000:$0.6319
  • 3000:$0.6480
STU7N60M2
DISTI # 497-13979-5-ND		STMicroelectronicsMOSFET N-CH 600V IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		32In Stock
  • 5025:$0.5656
  • 2550:$0.5954
  • 525:$0.8080
  • 150:$0.9781
  • 75:$1.1907
  • 10:$1.2540
  • 1:$1.4000
STU7N60M2
DISTI # 33958059		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		3000
  • 13:$1.4377
STU7N60M2
DISTI # 33733840		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		3000
  • 3000:$0.8937
STU7N60M2
DISTI # 33637595		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		3000
  • 20:$0.5140
STU7N60M2
DISTI # STU7N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin IPAK Tube (Alt: STU7N60M2)
RoHS: Compliant
Min Qty: 75
Container: Tube		Europe - 0
  • 750:€0.4879
  • 450:€0.5249
  • 300:€0.5689
  • 150:€0.6209
  • 75:€0.7589
STU7N60M2
DISTI # STU7N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin IPAK Tube - Rail/Tube (Alt: STU7N60M2)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 30000:$0.5169
  • 18000:$0.5279
  • 12000:$0.5519
  • 6000:$0.5779
  • 3000:$0.6069
STU7N60M2
DISTI # 06X3753		STMicroelectronicsPTD HIGH VOLTAGE0
  • 10000:$0.5270
  • 2500:$0.5430
  • 1000:$0.6730
  • 500:$0.7700
  • 100:$0.8710
  • 10:$1.1400
  • 1:$1.3300
STU7N60M2STMicroelectronicsN-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
RoHS: Compliant		3000Tube
  • 25:$0.6850
  • 100:$0.5900
  • 250:$0.5700
  • 500:$0.5600
  • 1000:$0.5450
STU7N60M2
DISTI # 511-STU7N60M2		STMicroelectronicsMOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
RoHS: Compliant		1832
  • 1:$1.3200
  • 10:$1.1300
  • 100:$0.8710
  • 500:$0.7700
  • 1000:$0.6080
  • 3000:$0.5390
  • 9000:$0.5190
STU7N60M2
DISTI # 7863823P		STMicroelectronicsMOSFET N-CHANNEL 600V 5A IPAK, TU3015
  • 100:£0.9860
  • 50:£1.0120
STU7N60M2
DISTI # C1S730200794578		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		30
  • 5:$0.5390
STU7N60M2
DISTI # XSFP00000096798		STMicroelectronics 
RoHS: Compliant		6000 in Stock0 on Order
  • 6000:$0.9133
  • 3000:$0.9786
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von STU7N60M2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,32 $
1,32 $
10
1,13 $
11,30 $
100
0,87 $
87,10 $
500
0,77 $
385,00 $
1000
0,61 $
608,00 $
3000
0,54 $
1 617,00 $
9000
0,52 $
4 671,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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