IPD65R650CEAUMA1

IPD65R650CEAUMA1
Mfr. #:
IPD65R650CEAUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET CONSUMER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD65R650CEAUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
10.1 A
Rds On - Drain-Source-Widerstand:
650 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
23 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
86 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS CE
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
11 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
64 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
IPD65R650CE SP001396908
Gewichtseinheit:
0.011993 oz
Tags
IPD65R65, IPD65R6, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
Single N-Channel 650V 650 mOhm 23 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 650V, 10.1A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Teil # Mfg. Beschreibung Aktie Preis
IPD65R650CEAUMA1
DISTI # V72:2272_13979491
Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R2500
  • 1:$0.3626
IPD65R650CEAUMA1
DISTI # V36:1790_13979491
Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R0
  • 2500000:$0.3011
  • 1250000:$0.3013
  • 250000:$0.3264
  • 25000:$0.3708
  • 2500:$0.3782
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 7A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 25000:$0.3304
  • 12500:$0.3391
  • 5000:$0.3521
  • 2500:$0.3782
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 7A TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2500In Stock
  • 1000:$0.4030
  • 500:$0.5104
  • 100:$0.6179
  • 10:$0.7920
  • 1:$0.8900
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 650V 7A TO-252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2500In Stock
  • 1000:$0.4030
  • 500:$0.5104
  • 100:$0.6179
  • 10:$0.7920
  • 1:$0.8900
IPD65R650CEAUMA1
DISTI # 33962603
Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R2500
  • 21:$0.3403
IPD65R650CEAUMA1
DISTI # SP001396908
Infineon Technologies AG650VCoolMOSCEPowerTransistor (Alt: SP001396908)
RoHS: Compliant
Min Qty: 2500
Europe - 7500
  • 25000:€0.2949
  • 15000:€0.3179
  • 10000:€0.3439
  • 5000:€0.3759
  • 2500:€0.4589
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1
Infineon Technologies AG650VCoolMOSCEPowerTransistor - Tape and Reel (Alt: IPD65R650CEAUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.3149
  • 15000:$0.3209
  • 10000:$0.3319
  • 5000:$0.3449
  • 2500:$0.3569
IPD65R650CEAUMA1
DISTI # 34AC1687
Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:10.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 1000:$0.4020
  • 500:$0.4350
  • 250:$0.4690
  • 100:$0.5020
  • 50:$0.5940
  • 25:$0.6860
  • 10:$0.7780
  • 1:$0.9290
IPD65R650CEAUMA1
DISTI # 726-IPD65R650CEAUMA1
Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant
2450
  • 1:$0.9200
  • 10:$0.7700
  • 100:$0.4970
  • 1000:$0.3980
IPD65R650CEAUMA1
DISTI # 2781176
Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-2522496
  • 500:£0.3320
  • 250:£0.3580
  • 100:£0.3830
  • 10:£0.6460
  • 1:£0.8100
IPD65R650CEAUMA1
DISTI # 2781176
Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-252
RoHS: Compliant
0
  • 100:$0.7650
  • 25:$0.9360
  • 5:$1.0800
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DMG2305UXQ-7

Mfr.#: DMG2305UXQ-7

OMO.#: OMO-DMG2305UXQ-7

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750341634

Mfr.#: 750341634

OMO.#: OMO-750341634

Common Mode Chokes / Filters MID-DC16US 10mH 10kHz .51 Ohms max
CLF12577NIT-101M-D

Mfr.#: CLF12577NIT-101M-D

OMO.#: OMO-CLF12577NIT-101M-D

Fixed Inductors 100uH +/-20% AECQ200 -55 to +150C
EP3WS10RJ

Mfr.#: EP3WS10RJ

OMO.#: OMO-EP3WS10RJ

Wirewound Resistors - Through Hole EP 3W (S) 10R 5%
DMG2305UXQ-7

Mfr.#: DMG2305UXQ-7

OMO.#: OMO-DMG2305UXQ-7-DIODES

P-CHANNEL ENHANCEMENT MODE MOSFET
EP3WS10RJ

Mfr.#: EP3WS10RJ

OMO.#: OMO-EP3WS10RJ-TE-CONNECTIVITY-AMP

Wirewound Resistors - Through Hole EP 3W (S) 10R 5%
861400021YO1LF

Mfr.#: 861400021YO1LF

OMO.#: OMO-861400021YO1LF-AMPHENOL-ICC

Headers & Wire Housings 578-5NPF-BERGSTIK STR
CK45-B3FD222KYGNA

Mfr.#: CK45-B3FD222KYGNA

OMO.#: OMO-CK45-B3FD222KYGNA-TDK

Ceramic Disc Capacitors CK45 2200pF 3kv B 10% long kink
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von IPD65R650CEAUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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