CSD25303W1015

CSD25303W1015
Mfr. #:
CSD25303W1015
Beschreibung:
MOSFET PCh NexFET Pwr MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD25303W1015 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CSD25303W1015 Mehr Informationen CSD25303W1015 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DSBGA-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
3 A
Rds On - Drain-Source-Widerstand:
56 mOhms
Vgs - Gate-Source-Spannung:
8 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.5 W
Aufbau:
Single
Handelsname:
NexFET
Verpackung:
Spule
Höhe:
0.625 mm
Länge:
1.5 mm
Serie:
CSD25303W1015
Transistortyp:
1 P-Channel
Breite:
1 mm
Marke:
Texas Instruments
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.000060 oz
Tags
CSD2530, CSD253, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***nell
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***rchild Semiconductor
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
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*** Americas
=""=""=""SOT1118/ STANDARD MARKING * REEL PACK, SMD, 7""""""""
***S
French Electronic Distributor since 1988
***ark
DUAL P CH MOSFET, TRENCH, 320V, -3.5A, SOT-1118; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:-4.5V ;RoHS Compliant: Yes
Teil # Beschreibung Aktie Preis
CSD25303W1015
DISTI # 296-28317-2-ND
MOSFET P-CH 20V 3A 6DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    CSD25303W1015
    DISTI # 296-28317-1-ND
    MOSFET P-CH 20V 3A 6DSBGA
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      CSD25303W1015
      DISTI # 296-28317-6-ND
      MOSFET P-CH 20V 3A 6DSBGA
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        CSD25303W1015
        DISTI # CSD25303W1015
        Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD25303W1015)
        RoHS: Not Compliant
        Min Qty: 1000
        Americas - 0
        • 1000:$0.3619
        • 1002:$0.3449
        • 2002:$0.3329
        • 5000:$0.3219
        • 10000:$0.3129
        CSD25303W1015Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        4390
        • 1000:$0.3300
        • 500:$0.3500
        • 100:$0.3600
        • 25:$0.3800
        • 1:$0.4100
        CSD25303W1015
        DISTI # 595-CSD25303W1015
        MOSFET PCh NexFET Pwr MOSFET
        RoHS: Compliant
        0
          Bild Teil # Beschreibung
          CSD25310Q2T

          Mfr.#: CSD25310Q2T

          OMO.#: OMO-CSD25310Q2T

          MOSFET -20V, P ch NexFET MOSFETG , single SON 2x2, 23.9mOhm 6-WSON -55 to 150
          CSD25310Q2

          Mfr.#: CSD25310Q2

          OMO.#: OMO-CSD25310Q2

          MOSFET 20-V P-CH NexFET Pwr MOSFET
          CSD25304W1015T

          Mfr.#: CSD25304W1015T

          OMO.#: OMO-CSD25304W1015T

          MOSFET 20V P-Ch NexFET
          CSD25301W1015

          Mfr.#: CSD25301W1015

          OMO.#: OMO-CSD25301W1015

          MOSFET P-Ch NexFET Power MOSFETs
          CSD25302Q2

          Mfr.#: CSD25302Q2

          OMO.#: OMO-CSD25302Q2

          MOSFET PCh NexFET Pwr MOSFET
          CSD25303W1015

          Mfr.#: CSD25303W1015

          OMO.#: OMO-CSD25303W1015

          MOSFET PCh NexFET Pwr MOSFET
          CSD25302Q2

          Mfr.#: CSD25302Q2

          OMO.#: OMO-CSD25302Q2-TEXAS-INSTRUMENTS

          MOSFET P-CH 20V 5A 6SON
          CSD25304W1015T

          Mfr.#: CSD25304W1015T

          OMO.#: OMO-CSD25304W1015T-TEXAS-INSTRUMENTS

          MOSFET P-CH 20V 3A 6DSBGA
          CSD25310Q2T

          Mfr.#: CSD25310Q2T

          OMO.#: OMO-CSD25310Q2T-TEXAS-INSTRUMENTS

          20-V P-CHANNEL NEXFET POWER MOSF
          CSD25310Q2

          Mfr.#: CSD25310Q2

          OMO.#: OMO-CSD25310Q2-TEXAS-INSTRUMENTS

          Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          4500
          Menge eingeben:
          Der aktuelle Preis von CSD25303W1015 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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