BSS123-7-F

Mfr. #:: BSS123-7-F
Hersteller:: Diodes Incorporated
Beschreibung:: Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSS123-7-F Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: BSS123-7-F Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Eingebaute Dioden

Produktkategorie: FETs - Einzeln

Serie: BSS123

Verpackung: Digi-ReelR Alternative Verpackung

Gewichtseinheit: 0.000282 oz

Montageart: SMD/SMT

Paket-Koffer: TO-236-3, SC-59, SOT-23-3

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: SOT-23-3

Aufbau: Single

FET-Typ: MOSFET N-Kanal, Metalloxid

Leistung max: 300mW

Transistor-Typ: 1 N-Channel

Drain-zu-Source-Spannung-Vdss: 100V

Eingangskapazität-Ciss-Vds: 60pF @ 25V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 170mA (Ta)

Rds-On-Max-Id-Vgs: 6 Ohm @ 170mA, 10V

Vgs-th-Max-Id: 2V @ 1mA

Gate-Lade-Qg-Vgs: -

Pd-Verlustleistung: 300 mW

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 8 ns

Anstiegszeit: 8 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 170 mA

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Widerstand: 6 Ohms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 13 ns

Typische-Einschaltverzögerungszeit: 8 ns

Vorwärts-Transkonduktanz-Min: 0.08 S

Kanal-Modus: Erweiterung

Tags: BSS123-7-F, BSS123-7, BSS123, BSS12, BSS1, BSS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSS123-7-F Mehr Informationen

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSS123-7-F DISTI # C1S205700113980	Diodes Incorporated	Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R RoHS: Compliant	948	3000:$0.0451
BSS123-7-F DISTI # BSS123-FDICT-ND	Diodes Incorporated	MOSFET N-CH 100V 170MA SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	117087In Stock	1000:$0.0588 500:$0.0846 100:$0.1546 10:$0.2730 1:$0.3000
BSS123-7-F DISTI # BSS123-FDIDKR-ND	Diodes Incorporated	MOSFET N-CH 100V 170MA SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	117087In Stock	1000:$0.0588 500:$0.0846 100:$0.1546 10:$0.2730 1:$0.3000
BSS123-7-F DISTI # BSS123-FDITR-ND	Diodes Incorporated	MOSFET N-CH 100V 170MA SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	114000In Stock	3000:$0.0519
BSS123-7-F DISTI # BSS123-7-F	Diodes Incorporated	Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS123-7-F) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0174 6000:$0.0165 12000:$0.0157 18000:$0.0150 30000:$0.0147
BSS123-7-F DISTI # BSS123-7-F	Diodes Incorporated	Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R (Alt: BSS123-7-F) RoHS: Compliant Min Qty: 18000 Container: Tape and Reel	Asia - 0
BSS123-7-F DISTI # BSS123-7-F	Diodes Incorporated	Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R (Alt: BSS123-7-F) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.0265 6000:€0.0245 12000:€0.0226 18000:€0.0225 30000:€0.0206
BSS123-7-F DISTI # 71028116	Diodes Incorporated	Transistor,NPN,1A,20V,SOT89 RoHS: Compliant	0	500:$0.2550 1000:$0.2500 2500:$0.2420
BSS123-7-F	Diodes Incorporated	N-Channel 100 V 6 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3 RoHS: Compliant	2800Cut Tape/Mini-Reel	1:$0.1620 250:$0.1290 500:$0.1250 750:$0.1230 1500:$0.1160
BSS123-7-F DISTI # 621-BSS123-F	Diodes Incorporated	MOSFET 100V 360mW RoHS: Compliant	2007	1:$0.3500 10:$0.2370 100:$0.0990 1000:$0.0680 3000:$0.0530
BSS123-7 DISTI # 621-BSS123	Diodes Incorporated	MOSFET 100V 360mW RoHS: Not compliant	0
BSS123-7-F	Diodes Incorporated		2340
BSS123-7-F DISTI # 7384926P	Zetex / Diodes Inc	MOSFET N-CHANNEL 100V 0.17A SOT23, RL	165400	500:£0.0460 1000:£0.0450 2500:£0.0420 5000:£0.0390
BSS123-7-F DISTI # 9228137	Zetex / Diodes Inc	MOSFET N-CHANNEL 100V 0.17A SOT23, RL	87000	3000:£0.0200 6000:£0.0180 12000:£0.0170 30000:£0.0160
BSS123-7-F DISTI # 7384926	Zetex / Diodes Inc	MOSFET N-CHANNEL 100V 0.17A SOT23, PK	9600	100:£0.0750 500:£0.0460 1000:£0.0450 2500:£0.0420 5000:£0.0390
BSS123-7-F	Diodes Incorporated	MOSFET Transistor, N-Channel, SOT-23	4044	2668:$0.1000 223:$0.1500 1:$0.5000
BSS123-7-F DISTI # BSS123-7-F	Diodes Incorporated	Transistor: N-MOSFET,unipolar,100V,0.17A,0.3W,SOT23	1854	10:$0.0664 100:$0.0331 500:$0.0277 3000:$0.0231 12000:$0.0219
BSS123-7-F DISTI # TMOSS6048	Diodes Incorporated	N-CH MOS-FET 0,17A 100V SOT23	Stock DE - 0Stock US - 0	3000:$0.0230 6000:$0.0216 12000:$0.0203 18000:$0.0183 33000:$0.0177
BSS1237F	Diodes Incorporated	N-CHANNEL ENHANCEMENT MODE MOSFET GREEN, PLASTIC PACKAGE-3 RoHS: Compliant	Europe - 3000
BSS123-7-F	Diodes Incorporated	INSTOCK	669
BSS123-7-F	Diodes Incorporated	INSTOCK	3306
BSS123-7-F DISTI # 1843725	Diodes Incorporated	MOSFET,N CH,100V,0.17A,SOT23-3 RoHS: Compliant	0	5:£0.2100 25:£0.2040 100:£0.0639 250:£0.0515 500:£0.0391
BSS123-7-F DISTI # XSFP00000030859	Diodes Incorporated	Small Signal Field-EffectTransistor,0.15AI(D),60V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant	1884	618:$0.3240 1884:$0.2945

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSS126 H6327 OMO.#: OMO-BSS126-H6327	MOSFET N-Ch 600V 21mA SOT-23-3
	Mfr.#: BSS123 E6327 OMO.#: OMO-BSS123-E6327-1190	Neu und Original
	Mfr.#: BSS123LT1G , MAX6414UK31 OMO.#: OMO-BSS123LT1G-MAX6414UK31-1190	Neu und Original
	Mfr.#: BSS123Q-13 OMO.#: OMO-BSS123Q-13-1190	Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
	Mfr.#: BSS124 OMO.#: OMO-BSS124-1190	Small Signal Field-Effect Transistor, 0.12A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
	Mfr.#: BSS126 H6327 OMO.#: OMO-BSS126-H6327-1190	Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R
	Mfr.#: BSS126 H6906 OMO.#: OMO-BSS126-H6906-1190	- Bulk (Alt: BSS126 H6906)
	Mfr.#: BSS126H6327(SP000919334) OMO.#: OMO-BSS126H6327-SP000919334--1190	Neu und Original
	Mfr.#: BSS129A OMO.#: OMO-BSS129A-1190	Neu und Original
	Mfr.#: BSS123 E6433 OMO.#: OMO-BSS123-E6433-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 170MA SOT-23

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von BSS123-7-F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,02 $~~; ~~0,02 $~~

10: ~~0,02 $~~; ~~0,18 $~~

100: ~~0,02 $~~; ~~1,76 $~~

500: ~~0,02 $~~; ~~8,30 $~~

1000: ~~0,02 $~~; ~~15,60 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSS123-7-F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes