IPD90R1K2C3ATMA1

Mfr. #:: IPD90R1K2C3ATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 900V 5.1A DPAK-2
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPD90R1K2C3ATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IPD90R1K2C3ATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PG-TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 900 V

Id - Kontinuierlicher Drainstrom:: 5.1 A

Rds On - Drain-Source-Widerstand:: 1.2 Ohms

Vgs th - Gate-Source-Schwellenspannung:: 3 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 28 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 83 W

Aufbau:: Single

Handelsname:: CoolMOS

Verpackung:: Spule

Höhe:: 2.3 mm

Länge:: 6.5 mm

Serie:: CoolMOS C3

Transistortyp:: 1 N-Channel

Breite:: 6.22 mm

Marke:: Infineon-Technologien

Abfallzeit:: 40 ns

Produktart:: MOSFET

Anstiegszeit:: 20 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 400 ns

Typische Einschaltverzögerungszeit:: 70 ns

Teil # Aliase:: IPD90R1K2C3 SP001117752

Gewichtseinheit:: 0.139332 oz

Tags: IPD90R, IPD90, IPD9, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD90R1K2C3ATMA1 Beschreibung

***ure Electronics: Single N-Channel 900 V 1.2 Ohm 28 nC CoolMOS Power Mosfet - TO-252-3

***ical: Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) TO-252 T/R

***ineon SCT: Replacement for CoolMOS™ C3 is CoolMOS™ P7, PG-TO252-3, RoHS

***ineon: 900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

IPD90R1K2C3ATMA1 Mehr Informationen

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPD90R1K2C3ATMA1 DISTI # V72:2272_06383545	Infineon Technologies AG	Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1186	1000:$0.7117 500:$0.9007 250:$0.9224 100:$1.0249 25:$1.1963 10:$1.3294 1:$1.6989
IPD90R1K2C3ATMA1 DISTI # V36:1790_06383545	Infineon Technologies AG	Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD90R1K2C3ATMA1 DISTI # IPD90R1K2C3ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 900V 5.1A TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11210In Stock	1000:$0.8078 500:$1.0232 100:$1.2386 10:$1.5890 1:$1.7800
IPD90R1K2C3ATMA1 DISTI # IPD90R1K2C3ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 900V 5.1A TO-252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11210In Stock	1000:$0.8078 500:$1.0232 100:$1.2386 10:$1.5890 1:$1.7800
IPD90R1K2C3ATMA1 DISTI # IPD90R1K2C3ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 900V 5.1A TO-252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	12500:$0.6692 5000:$0.6954 2500:$0.7320
IPD90R1K2C3ATMA1 DISTI # 32415848	Infineon Technologies AG	Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.8333
IPD90R1K2C3ATMA1 DISTI # 32404249	Infineon Technologies AG	Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1186	1000:$0.7117 500:$0.9007 250:$0.9224 100:$1.0249 25:$1.1963 11:$1.3294
IPD90R1K2C3ATMA1 DISTI # IPD90R1K2C3ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 900V 5.1A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD90R1K2C3ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.6029 15000:$0.6139 10000:$0.6359 5000:$0.6599 2500:$0.6839
IPD90R1K2C3ATMA1 DISTI # SP001117752	Infineon Technologies AG	Trans MOSFET N-CH 900V 5.1A 3-Pin TO-252 T/R (Alt: SP001117752) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.6589 15000:€0.7029 10000:€0.7729 5000:€0.8649 2500:€1.1089
IPD90R1K2C3ATMA1 DISTI # 33P7146	Infineon Technologies AG	MOSFET, N CHANNEL, 100V, 5.1A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:5.1A,Drain Source Voltage Vds:900V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	1520	1000:$0.7200 500:$0.9130 250:$0.9720 100:$1.0300 50:$1.1300 25:$1.2400 10:$1.3400 1:$1.5800
IPD90R1K2C3ATMA1	Infineon Technologies AG	Single N-Channel 900 V 1.2 Ohm 28 nC CoolMOS Power Mosfet - TO-252-3 RoHS: Compliant	2500Reel	2500:$0.5950
IPD90R1K2C3ATMA1 DISTI # 726-IPD90R1K2C3ATMA1	Infineon Technologies AG	MOSFET N-Ch 900V 5.1A DPAK-2	17230	1:$1.5600 10:$1.3300 100:$1.0200 500:$0.9040 1000:$0.7130 2500:$0.6330 10000:$0.6090
IPD90R1K2C3ATMA1 DISTI # IPD90R1K2C3ATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,900V,3.2A,83W,PG-TO252-3	2497	1:$1.0000 3:$0.8800 10:$0.8000 100:$0.7400
IPD90R1K2C3ATMA1 DISTI # 1664030RL	Infineon Technologies AG	MOSFET, N, TO-252 RoHS: Compliant	0	100:$1.5800 10:$1.9300 1:$2.2300
IPD90R1K2C3ATMA1 DISTI # 1664030	Infineon Technologies AG	MOSFET, N, TO-252 RoHS: Compliant	1520	100:$1.5800 10:$1.9300 1:$2.2300
IPD90R1K2C3ATMA1 DISTI # 1664030	Infineon Technologies AG	MOSFET, N, TO-252	1711	500:£0.7100 250:£0.7560 100:£0.8020 25:£1.0400 5:£1.1400
IPD90R1K2C3ATMA1 DISTI # XSFP00000115131	Infineon Technologies AG	RoHS: Compliant	5000 in Stock0 on Order	5000:$0.6611 2500:$0.7000

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Verfügbarkeit

Aktie:: 18
Auf Bestellung:: 2001
Menge eingeben:

Der aktuelle Preis von IPD90R1K2C3ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,56 $~~; ~~1,56 $~~

10: ~~1,33 $~~; ~~13,30 $~~

100: ~~1,02 $~~; ~~102,00 $~~

500: ~~0,90 $~~; ~~452,00 $~~

1000: ~~0,71 $~~; ~~713,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPD90R1K2C3ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes