 |  |  | |
| PartNumber | IPD90R1K2C3ATMA1 | IPD90R1K2C3BTMA1 | IPD90R1K2C3 |
| Description | MOSFET N-Ch 900V 5.1A DPAK-2 | MOSFET N-CH 900V 5.1A TO-252 | IGBT Transistors MOSFET N-Ch 900V 5.1A DPAK-2 CoolMOS C3 |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | FETs - Single |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PG-TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | - | - |
| Id Continuous Drain Current | 5.1 A | - | - |
| Rds On Drain Source Resistance | 1.2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 28 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | - | Single |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | CoolMOS C3 | - | CoolMOS |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 40 ns | - | 40 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | 20 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 400 ns | - | 400 ns |
| Typical Turn On Delay Time | 70 ns | - | 70 ns |
| Part # Aliases | IPD90R1K2C3 SP001117752 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Part Aliases | - | - | IPD90R1K2C3BTMA1 IPD90R1K2C3XT SP000413720 |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-TO252-3 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 83W |
| Drain to Source Voltage Vdss | - | - | 900V |
| Input Capacitance Ciss Vds | - | - | 710pF @ 100V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 5.1A (Tc) |
| Rds On Max Id Vgs | - | - | 1.2 Ohm @ 2.8A, 10V |
| Vgs th Max Id | - | - | 3.5V @ 310μA |
| Gate Charge Qg Vgs | - | - | 28nC @ 10V |
| Pd Power Dissipation | - | - | 83 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 5.1 A |
| Vds Drain Source Breakdown Voltage | - | - | 900 V |
| Rds On Drain Source Resistance | - | - | 1.2 Ohms |
| Channel Mode | - | - | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD90R1K2C3ATMA1 | MOSFET N-Ch 900V 5.1A DPAK-2 | |
| IPD90R1K2C3BTMA1 | MOSFET N-CH 900V 5.1A TO-252 | ||
| IPD90R1K2C3ATMA1 | MOSFET N-Ch 900V 5.1A DPAK-2 | ||
| IPD90R1K2C3 | IGBT Transistors MOSFET N-Ch 900V 5.1A DPAK-2 CoolMOS C3 |