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SI9410BDY-T1-E3

SI9410BDY-T1-E3
Mfr. #:
SI9410BDY-T1-E3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI9410BDY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Tags
SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.1A; On Resistance, Rds(on):24mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***nell
MOSFET, N REEL 2500; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.2A; Resistance, Rds On:0.024ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:30A; N-channel Gate Charge:15nC; No. of Pins:8; Power, Pd:1.5W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 10V:0.024ohm; Resistance, Rds on @ Vgs = 4.5V:0.033ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:11ns; Time, Rise:15ns; Time, t Off:30ns; Time, t On:10ns; Transistors, No. of:1; Voltage, Vds Max:30V; Width, Tape:12mm
Teil # Mfg. Beschreibung Aktie Preis
SI9410BDY-T1-E3
DISTI # SI9410BDY-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI9410BDY-T1-E3
    DISTI # SI9410BDY-T1-E3CT-ND    		Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI9410BDY-T1-E3
      DISTI # SI9410BDY-T1-E3DKR-ND      		Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI9410BDY-T1-E3
        DISTI # 781-SI9410BDY-T1-E3        		Vishay IntertechnologiesMOSFET 30V 8.1A 0.024Ohm
        RoHS: Compliant        		0
          SI9410BDY-T1
          DISTI # 781-SI9410BDY          		Vishay IntertechnologiesMOSFET 30V 8.1A 2.5W
          RoHS: Not compliant          		0
            SI9410BDY-T1-E3Vishay Intertechnologies 1150
              SI9410BDY-T1-E3Vishay Intertechnologies 2066
                SI9410BDY-T1-E3Vishay Intertechnologies 2892
                  SI9410BDY-T1-E3Vishay Siliconix 1728
                    SI9410BDYT1E3Vishay Intertechnologies 
                    RoHS: Compliant                    		Europe - 2025
                      Bild Teil # Beschreibung
                      SI9410BDY-T1-E3

                      Mfr.#: SI9410BDY-T1-E3

                      OMO.#: OMO-SI9410BDY-T1-E3

                      		 MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
                      SI9410BDY-T1-GE3

                      Mfr.#: SI9410BDY-T1-GE3

                      OMO.#: OMO-SI9410BDY-T1-GE3

                      		 MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
                      SI9410BDY-T1-GE3

                      Mfr.#: SI9410BDY-T1-GE3

                      OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY

                      		 IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
                      SI9410BDY-T1-E3

                      Mfr.#: SI9410BDY-T1-E3

                      OMO.#: OMO-SI9410BDY-T1-E3-VISHAY

                      		 IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
                      SI9410B

                      Mfr.#: SI9410B

                      OMO.#: OMO-SI9410B-1190

                      		 Neu und Original
                      SI9410BDY

                      Mfr.#: SI9410BDY

                      OMO.#: OMO-SI9410BDY-1190

                      		 POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
                      SI9410BDY-T1

                      Mfr.#: SI9410BDY-T1

                      OMO.#: OMO-SI9410BDY-T1-1190

                      		 MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
                      SI9410BDY-T1-E3.

                      Mfr.#: SI9410BDY-T1-E3.

                      OMO.#: OMO-SI9410BDY-T1-E3--1190

                      		 Neu und Original
                      Verfügbarkeit
                      Aktie:
                      Available
                      Auf Bestellung:
                      3500
                      Menge eingeben:
                      Der aktuelle Preis von SI9410BDY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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                      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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