SI9410BDY-T1-E3

Mfr. #:: SI9410BDY-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI9410BDY-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI9410BDY-T1-E3 Datasheet SI9410BDY-T1-E3 Datasheet (P4-P6)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI9

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Teil # Aliase:: SI9410BDY-E3

Gewichtseinheit:: 0.017870 oz

Tags: SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9410BDY-T1-E3 Beschreibung

***et Europe: Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.1A; On Resistance, Rds(on):24mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes

***nell: MOSFET, N REEL 2500; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.2A; Resistance, Rds On:0.024ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:30A; N-channel Gate Charge:15nC; No. of Pins:8; Power, Pd:1.5W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 10V:0.024ohm; Resistance, Rds on @ Vgs = 4.5V:0.033ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:11ns; Time, Rise:15ns; Time, t Off:30ns; Time, t On:10ns; Transistors, No. of:1; Voltage, Vds Max:30V; Width, Tape:12mm

Market price

Teil #	Mfg.	Beschreibung	Aktie
SI9410BDY-T1-E3 DISTI # SI9410BDY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 6.2A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI9410BDY-T1-E3 DISTI # SI9410BDY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 6.2A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI9410BDY-T1-E3 DISTI # SI9410BDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 6.2A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI9410BDY-T1-E3 DISTI # 781-SI9410BDY-T1-E3	Vishay Intertechnologies	MOSFET 30V 8.1A 0.024Ohm RoHS: Compliant	0
SI9410BDY-T1 DISTI # 781-SI9410BDY	Vishay Intertechnologies	MOSFET 30V 8.1A 2.5W RoHS: Not compliant	0
SI9410BDY-T1-E3	Vishay Intertechnologies		1150
SI9410BDY-T1-E3	Vishay Intertechnologies		2066
SI9410BDY-T1-E3	Vishay Intertechnologies		2892
SI9410BDY-T1-E3	Vishay Siliconix		1728
SI9410BDYT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2025

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI9410BDY-T1-E3 OMO.#: OMO-SI9410BDY-T1-E3	MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
	Mfr.#: SI9410BDY-T1-GE3 OMO.#: OMO-SI9410BDY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
	Mfr.#: SI9410BDY-T1-GE3 OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY	IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
	Mfr.#: SI9410BDY-T1-E3 OMO.#: OMO-SI9410BDY-T1-E3-VISHAY	IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
	Mfr.#: SI9410B OMO.#: OMO-SI9410B-1190	Neu und Original
	Mfr.#: SI9410BDY OMO.#: OMO-SI9410BDY-1190	POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
	Mfr.#: SI9410BDY-T1 OMO.#: OMO-SI9410BDY-T1-1190	MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
	Mfr.#: SI9410BDY-T1-E3. OMO.#: OMO-SI9410BDY-T1-E3--1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von SI9410BDY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

SI9410BDY-T 4
SI9410BD 5
SI9410B 6
SI9410 21
SI941 27
SI94 197
SI9 1126

Neueste Produkte

-12 V and -20 V P-Channel Gen III MOSFETs

Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
DG2788A Dual DPDT / Quad SPDT Analog Switch

Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
Smart Load Switches

Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
SUM70101EL 100 V P-Channel MOSFET

Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
Compare SI9410BDY-T1-E3

SI9410BDYT1 vs SI9410BDYT1E3 vs SI9410BDYT1GE3
DGQ2788A AEC-Q100 Qualified Analog Switch

The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.

More Newest Products

SI9410BDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes