SI9410BDY-T1-GE3

SI9410BDY-T1-GE3
Mfr. #:
SI9410BDY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI9410BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI9410BDY-T1-GE3 DatasheetSI9410BDY-T1-GE3 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI9
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI9410BDY-GE3
Gewichtseinheit:
0.017870 oz
Tags
SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
***i-Key
MOSFET N-CH 30V 6.2A 8SOIC
***ukat
N-Ch 30V 8,1A 2,5W 0,024R SO8
***ment14 APAC
MOSFET, N CH, 30V, 8.1A , SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
Teil # Mfg. Beschreibung Aktie Preis
SI9410BDY-T1-GE3
DISTI # SI9410BDY-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI9410BDY-T1-GE3
    DISTI # 781-SI9410BDY-GE3
    Vishay IntertechnologiesMOSFET 30V 8.1A 2.5W 24mohm @ 10V
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      SI9410BDY-T1-E3

      Mfr.#: SI9410BDY-T1-E3

      OMO.#: OMO-SI9410BDY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
      SI9410BDY-T1-GE3

      Mfr.#: SI9410BDY-T1-GE3

      OMO.#: OMO-SI9410BDY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
      SI9410BDY-T1-GE3

      Mfr.#: SI9410BDY-T1-GE3

      OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY

      IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
      SI9410BDY-T1-E3

      Mfr.#: SI9410BDY-T1-E3

      OMO.#: OMO-SI9410BDY-T1-E3-VISHAY

      IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
      SI9410BDY

      Mfr.#: SI9410BDY

      OMO.#: OMO-SI9410BDY-1190

      POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
      SI9410BDY-T1

      Mfr.#: SI9410BDY-T1

      OMO.#: OMO-SI9410BDY-T1-1190

      MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
      SI9410BDY-T1-E3.

      Mfr.#: SI9410BDY-T1-E3.

      OMO.#: OMO-SI9410BDY-T1-E3--1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von SI9410BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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