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IPD80R1K4CEBTMA1

IPD80R1K4CEBTMA1
Mfr. #:
IPD80R1K4CEBTMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 800V 3.9A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD80R1K4CEBTMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
3.9 A
Rds On - Drain-Source-Widerstand:
1.2 Ohms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
23 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
63 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS CE
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
72 ns
Typische Einschaltverzögerungszeit:
25 ns
Teil # Aliase:
IPD80R1K4CE SP001100604
Gewichtseinheit:
0.139332 oz
Tags
IPD80R1K4C, IPD80R1K4, IPD80R1, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R
***ical
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 800V 3.9A TO252-3
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
Teil # Mfg. Beschreibung Aktie Preis
IPD80R1K4CEBTMA1
DISTI # IPD80R1K4CEBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD80R1K4CEBTMA1
    DISTI # IPD80R1K4CEBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD80R1K4CEBTMA1
      DISTI # IPD80R1K4CEBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        Bild Teil # Beschreibung
        IPD80R1K4P7ATMA1

        Mfr.#: IPD80R1K4P7ATMA1

        OMO.#: OMO-IPD80R1K4P7ATMA1

        		 MOSFET
        IPD80R1K4CEATMA1

        Mfr.#: IPD80R1K4CEATMA1

        OMO.#: OMO-IPD80R1K4CEATMA1

        		 MOSFET N-Ch 800V 3.9A DPAK-2
        IPD80R1K0CEATMA1

        Mfr.#: IPD80R1K0CEATMA1

        OMO.#: OMO-IPD80R1K0CEATMA1

        		 MOSFET N-Ch 800V 5.7A DPAK-2
        IPD80R1K4P7ATMA1-CUT TAPE

        Mfr.#: IPD80R1K4P7ATMA1-CUT TAPE

        OMO.#: OMO-IPD80R1K4P7ATMA1-CUT-TAPE-1190

        		 Neu und Original
        IPD80R1K4CE

        Mfr.#: IPD80R1K4CE

        OMO.#: OMO-IPD80R1K4CE-1190

        		 Trans MOSFET N-CH 800V 3.9A 3-Pin TO-252 T/R (Alt: IPD80R1K4CE)
        IPD80R1K4CEATMA1 , 2SD24

        Mfr.#: IPD80R1K4CEATMA1 , 2SD24

        OMO.#: OMO-IPD80R1K4CEATMA1-2SD24-1190

        		 Neu und Original
        IPD80R1K4CEBTMA1 , 2SD24

        Mfr.#: IPD80R1K4CEBTMA1 , 2SD24

        OMO.#: OMO-IPD80R1K4CEBTMA1-2SD24-1190

        		 Neu und Original
        IPD80R1K4P7

        Mfr.#: IPD80R1K4P7

        OMO.#: OMO-IPD80R1K4P7-1190

        		 Neu und Original
        IPD80R1K0CEBTMA1

        Mfr.#: IPD80R1K0CEBTMA1

        OMO.#: OMO-IPD80R1K0CEBTMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-Ch 800V 5.7A DPAK-2
        IPD80R1K4CEBTMA1

        Mfr.#: IPD80R1K4CEBTMA1

        OMO.#: OMO-IPD80R1K4CEBTMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-Ch 800V 3.9A DPAK-2
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3000
        Menge eingeben:
        Der aktuelle Preis von IPD80R1K4CEBTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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