IPD80R

IPD80R1K0CEATMA1 vs IPD80R1K2P7ATMA1 vs IPD80R1K0CEBTMA1

 
PartNumberIPD80R1K0CEATMA1IPD80R1K2P7ATMA1IPD80R1K0CEBTMA1
DescriptionMOSFET N-Ch 800V 5.7A DPAK-2MOSFET N-CH 800V 4.5A TO252-3MOSFET N-Ch 800V 5.7A DPAK-2
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePG-TO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current5.7 A--
Rds On Drain Source Resistance950 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge31 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation83 W--
ConfigurationSingle-Single
TradenameCoolMOS--
PackagingReel-Reel
Height2.3 mm--
Length6.5 mm--
SeriesCoolMOS CE-XPD80R1
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Fall Time8 ns-8 ns
Product TypeMOSFET--
Rise Time15 ns-15 ns
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns-72 ns
Typical Turn On Delay Time25 ns-25 ns
Part # AliasesIPD80R1K0CE SP001130974--
Unit Weight0.139332 oz-0.139332 oz
Part Aliases--IPD80R1K0CE SP001100606
Package Case--TO-252-3
Pd Power Dissipation--83 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--5.7 A
Vds Drain Source Breakdown Voltage--800 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--950 mOhms
Qg Gate Charge--31 nC
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD80R280P7ATMA1 MOSFET
IPD80R1K4P7ATMA1 MOSFET
IPD80R2K0P7ATMA1 MOSFET
IPD80R4K5P7ATMA1 MOSFET
IPD80R450P7ATMA1 MOSFET
IPD80R1K4CEATMA1 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K0CEATMA1 MOSFET N-Ch 800V 5.7A DPAK-2
IPD80R2K7C3AATMA1 MOSFET AUTOMOTIVE
IPD80R2K8CEATMA1 MOSFET N-Ch 800V 1.9A DPAK-2
IPD80R3K3P7ATMA1 MOSFET
IPD80R2K4P7ATMA1 MOSFET
IPD80R360P7ATMA1 MOSFET
IPD80R280P7ATMA1 MOSFET N-CH 800V 17A TO252
IPD80R2K0P7ATMA1 MOSFET N-CH 800V 3A TO252-3
IPD80R2K4P7ATMA1 MOSFET N-CH 800V 2.5A TO252-3
IPD80R2K7C3AATMA1 MOSFET N-CH TO252-3
IPD80R360P7ATMA1 MOSFET N-CH 800V 13A TO252-3
IPD80R3K3P7ATMA1 MOSFET N-CH 800V 1.9A TO252-3
IPD80R600P7ATMA1 MOSFET N-CH 800V 8A TO252-3
IPD80R1K0CEATMA1 MOSFET N-CH 800V 5.7A TO252-3
IPD80R1K2P7ATMA1 MOSFET N-CH 800V 4.5A TO252-3
IPD80R1K4P7ATMA1 MOSFET N-CH 800V 4A DPAK
IPD80R450P7ATMA1 MOSFET N-CH 800V 11A DPAK
IPD80R4K5P7ATMA1 MOSFET N-CH 800V 1.5A DPAK
IPD80R1K0CEBTMA1 MOSFET N-Ch 800V 5.7A DPAK-2
IPD80R1K4CEBTMA1 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K4CEATMA1 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R2K8CEBTMA1 MOSFET N-Ch 800V 1.9A DPAK-2
IPD80R2K8CEATMA1 MOSFET N-Ch 800V 1.9A DPAK-2
Infineon Technologies
Infineon Technologies
IPD80R1K4CEBTMA1 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K2P7ATMA1-CUT TAPE Neu und Original
IPD80R1K4P7ATMA1-CUT TAPE Neu und Original
IPD80R280P7ATMA1-CUT TAPE Neu und Original
IPD80R2K0P7ATMA1-CUT TAPE Neu und Original
IPD80R450P7ATMA1-CUT TAPE Neu und Original
IPD80R4K5P7ATMA1-CUT TAPE Neu und Original
IPD80R1K0CE Trans MOSFET N 800V 5.7A 3-Pin TO-252 T/R (Alt: IPD80R1K0CE)
IPD80R1K0CEATMA1/INFINEO Neu und Original
IPD80R1K0CEBTMA1 , 2SD24 Neu und Original
IPD80R1K4CE Trans MOSFET N-CH 800V 3.9A 3-Pin TO-252 T/R (Alt: IPD80R1K4CE)
IPD80R1K4CEATMA1 , 2SD24 Neu und Original
IPD80R1K4CEBTMA1 , 2SD24 Neu und Original
IPD80R1K4P7 Neu und Original
IPD80R280P7 Trans MOSFET N 800V 17A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R280P7ATMA1)
IPD80R2K7C3A Transistor MOSFET N-CH 800V 2A 3-Pin TO-252 T/R (Alt: IPD80R2K7C3A)
IPD80R2K8CE Trans MOSFET N-CH 800(Min)V 1.9A 3-Pin TO-252 T/R (Alt: IPD80R2K8CE)
IPD80R2K8CEBTMA1 , 2SD24 Neu und Original
IPD80R360P7 Neu und Original
IPD80R4K5P7 Neu und Original
IPD80R600P7 Neu und Original
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