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IPD80R2K4P7ATMA1

IPD80R2K4P7ATMA1
Mfr. #:
IPD80R2K4P7ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 800V 2.5A TO252-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD80R2K4P7ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD80R2K4P7ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPD80R2K, IPD80R2, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 2.4 Ohm 8 nC CoolMOS™ Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 800V 2.5A 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 800V 2.5A TO252-3
***ronik
N-CH 800V 2,5A 2400mOhm TO252
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 2.5A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 2.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:22W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 2,5A, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.5A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):2ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:22W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Teil # Mfg. Beschreibung Aktie Preis
IPD80R2K4P7ATMA1
DISTI # 32416800		Infineon Technologies AGLOW POWER_NEW2500
  • 2500:$0.5094
IPD80R2K4P7ATMA1
DISTI # IPD80R2K4P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 2.5A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2109In Stock
  • 1000:$0.3918
  • 500:$0.4897
  • 100:$0.6195
  • 10:$0.8080
  • 1:$0.9200
IPD80R2K4P7ATMA1
DISTI # IPD80R2K4P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 800V 2.5A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2109In Stock
  • 1000:$0.3918
  • 500:$0.4897
  • 100:$0.6195
  • 10:$0.8080
  • 1:$0.9200
IPD80R2K4P7ATMA1
DISTI # IPD80R2K4P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 2.5A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.3011
  • 12500:$0.3090
  • 5000:$0.3209
  • 2500:$0.3447
IPD80R2K4P7ATMA1
DISTI # SP001644284		Infineon Technologies AGLOW POWER_NEW (Alt: SP001644284)
RoHS: Compliant
Min Qty: 2500		Europe - 5000
  • 25000:€0.2689
  • 15000:€0.2899
  • 10000:€0.3139
  • 5000:€0.3419
  • 2500:€0.4179
IPD80R2K4P7ATMA1
DISTI # IPD80R2K4P7ATMA1		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPD80R2K4P7ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2869
  • 15000:$0.2919
  • 10000:$0.3029
  • 5000:$0.3139
  • 2500:$0.3259
IPD80R2K4P7ATMA1
DISTI # 24AC9043		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes91
  • 1000:$0.3670
  • 500:$0.3970
  • 250:$0.4270
  • 100:$0.4580
  • 50:$0.5410
  • 25:$0.6250
  • 10:$0.7090
  • 1:$0.8480
IPD80R2K4P7ATMA1
DISTI # 726-IPD80R2K4P7ATMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		15
  • 1:$0.8400
  • 10:$0.7020
  • 100:$0.4530
  • 1000:$0.3630
IPD80R2K4P7ATMA1Infineon Technologies AGSingle N-Channel 800 V 2.4 Ohm 8 nC CoolMOS Power Mosfet - DPAK
RoHS: Not Compliant		2500Reel
  • 2500:$0.3100
IPD80R2K4P7ATMA1
DISTI # 2771321		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, TO-252
RoHS: Compliant		91
  • 1000:$0.5910
  • 500:$0.7380
  • 100:$0.9340
  • 5:$1.2200
IPD80R2K4P7ATMA1
DISTI # 2771321		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, TO-2522716
  • 500:£0.3000
  • 250:£0.3230
  • 100:£0.3460
  • 10:£0.5870
  • 1:£0.7330
IPD80R2K4P7ATMA1
DISTI # XSFP00000117330		Infineon Technologies AG 
RoHS: Compliant		5000 in Stock0 on Order
  • 5000:$0.4133
  • 2500:$0.4429
IPD80R2K4P7ATMA1
DISTI # XSKDRABV0021242		Infineon Technologies AG 
RoHS: Compliant		7500 in Stock0 on Order
  • 7500:$0.3973
  • 2500:$0.4257
Bild Teil # Beschreibung
IPD80R2K0P7ATMA1

Mfr.#: IPD80R2K0P7ATMA1

OMO.#: OMO-IPD80R2K0P7ATMA1

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Mfr.#: IPD80R2K8CEATMA1

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IPD80R2K4P7ATMA1

Mfr.#: IPD80R2K4P7ATMA1

OMO.#: OMO-IPD80R2K4P7ATMA1

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OMO.#: OMO-IPD80R2K0P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 3A TO252-3
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IPD80R2K7C3AATMA1

Mfr.#: IPD80R2K7C3AATMA1

OMO.#: OMO-IPD80R2K7C3AATMA1-INFINEON-TECHNOLOGIES

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IPD80R2K7C3A

Mfr.#: IPD80R2K7C3A

OMO.#: OMO-IPD80R2K7C3A-1190

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IPD80R2K8CEBTMA1 , 2SD24

Mfr.#: IPD80R2K8CEBTMA1 , 2SD24

OMO.#: OMO-IPD80R2K8CEBTMA1-2SD24-1190

 Neu und Original
IPD80R2K8CEBTMA1

Mfr.#: IPD80R2K8CEBTMA1

OMO.#: OMO-IPD80R2K8CEBTMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 800V 1.9A DPAK-2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von IPD80R2K4P7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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