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IPD80R2K8CEATMA1

IPD80R2K8CEATMA1
Mfr. #:
IPD80R2K8CEATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 800V 1.9A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD80R2K8CEATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD80R2K8CEATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
1.9 A
Rds On - Drain-Source-Widerstand:
2.8 Ohms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
12 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
42 W
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS CE
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
72 ns
Typische Einschaltverzögerungszeit:
25 ns
Teil # Aliase:
IPD80R2K8CE SP001130970
Gewichtseinheit:
0.139332 oz
Tags
IPD80R2K8, IPD80R2K, IPD80R2, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 800 V 2.8 O 12 nC CoolMOS CE Power Transistor - DPAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 1.9A I(D), 800V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 800V, 1.9A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 2.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 42W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
Teil # Mfg. Beschreibung Aktie Preis
IPD80R2K8CEATMA1
DISTI # V72:2272_06384044		Infineon Technologies AGTrans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD80R2K8CEATMA1
    DISTI # V36:1790_06384044    		Infineon Technologies AGTrans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		0
      IPD80R2K8CEATMA1
      DISTI # IPD80R2K8CEATMA1CT-ND      		Infineon Technologies AGMOSFET N-CH 800V 1.9A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		14000In Stock
      • 1000:$0.4633
      • 500:$0.5868
      • 100:$0.7104
      • 10:$0.9110
      • 1:$1.0200
      IPD80R2K8CEATMA1
      DISTI # IPD80R2K8CEATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 800V 1.9A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		14000In Stock
      • 1000:$0.4633
      • 500:$0.5868
      • 100:$0.7104
      • 10:$0.9110
      • 1:$1.0200
      IPD80R2K8CEATMA1
      DISTI # IPD80R2K8CEATMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 800V 1.9A TO252-3
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		12500In Stock
      • 25000:$0.3816
      • 12500:$0.3838
      • 5000:$0.3988
      • 2500:$0.4198
      IPD80R2K8CEATMA1
      DISTI # IPD80R2K8CEATMA1      		Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 1.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R2K8CEATMA1)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 25000:$0.3459
      • 15000:$0.3519
      • 10000:$0.3639
      • 5000:$0.3779
      • 2500:$0.3919
      IPD80R2K8CEATMA1
      DISTI # SP001130970      		Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 1.9A 3-Pin TO-252 T/R (Alt: SP001130970)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 25000:€0.3769
      • 15000:€0.4059
      • 10000:€0.4509
      • 5000:€0.5059
      • 2500:€0.5969
      IPD80R2K8CEATMA1
      DISTI # 726-IPD80R2K8CEATMA1      		Infineon Technologies AGMOSFET N-Ch 800V 1.9A DPAK-23091
      • 1:$0.8900
      • 10:$0.7640
      • 100:$0.5870
      • 500:$0.5180
      • 1000:$0.4090
      IPD80R2K8CEATMA1
      DISTI # 2709949      		Infineon Technologies AGMOSFET, N-CH, 800V, 1.9A, TO-252
      RoHS: Compliant      		0
      • 1000:$0.7020
      • 500:$0.8900
      • 100:$1.1600
      • 10:$1.4600
      • 1:$1.6400
      IPD80R2K8CEATMA1
      DISTI # 2709949      		Infineon Technologies AGMOSFET, N-CH, 800V, 1.9A, TO-2520
      • 500:£0.4030
      • 250:£0.4300
      • 100:£0.4570
      • 25:£0.5970
      • 5:£0.6670
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von IPD80R2K8CEATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,89 $
      0,89 $
      10
      0,76 $
      7,64 $
      100
      0,59 $
      58,70 $
      500
      0,52 $
      259,00 $
      1000
      0,41 $
      409,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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