PartNumber | IPD80R2K0P7ATMA1 | IPD80R2K7C3AATMA1 | IPD80R2K4P7ATMA1 |
Description | MOSFET | MOSFET AUTOMOTIVE | MOSFET |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | DPAK-3 | TO-252-3 | DPAK-3 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | - | 800 V |
Id Continuous Drain Current | 3 A | - | 2.5 A |
Rds On Drain Source Resistance | 1.7 Ohms | - | 2 Ohms |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | 2.5 V |
Vgs Gate Source Voltage | 20 V | - | 20 V |
Qg Gate Charge | 9 nC | - | 7.5 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 24 W | - | 22 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | CoolMOS | - | CoolMOS |
Packaging | Reel | Reel | Reel |
Series | CoolMOS P7 | CoolMOS C3A | CoolMOS P7 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 20 ns | - | 30 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | - | 10 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 40 ns | - | 40 ns |
Typical Turn On Delay Time | 10 ns | - | 8 ns |
Part # Aliases | IPD80R2K0P7 SP001634906 | IPD80R2K7C3A SP001065818 | IPD80R2K4P7 SP001644284 |
Unit Weight | 0.013655 oz | 0.139332 oz | - |
Height | - | 2.3 mm | - |
Length | - | 6.5 mm | - |
Width | - | 6.22 mm | - |