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IPD80R1K4CEATMA1

IPD80R1K4CEATMA1
Mfr. #:
IPD80R1K4CEATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 800V 3.9A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD80R1K4CEATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD80R1K4CEATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
XPD80R1
Verpackung
Spule
Teil-Aliasnamen
IPD80R1K4CE SP001130972
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
CoolMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
63 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
12 ns
Anstiegszeit
15 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
3.9 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Widerstand
1.4 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
72 ns
Typische-Einschaltverzögerungszeit
25 ns
Qg-Gate-Ladung
23 nC
Tags
IPD80R1K4C, IPD80R1K4, IPD80R1, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
Teil # Mfg. Beschreibung Aktie Preis
IPD80R1K4CEATMA1
DISTI # V72:2272_06383758		Infineon Technologies AGTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R2450
  • 1000:$0.4802
  • 500:$0.5896
  • 250:$0.6425
  • 100:$0.6647
  • 25:$0.8239
  • 10:$0.8339
  • 1:$0.9540
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7146In Stock
  • 1000:$0.6069
  • 500:$0.7687
  • 100:$0.9912
  • 10:$1.2540
  • 1:$1.4200
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7146In Stock
  • 1000:$0.6069
  • 500:$0.7687
  • 100:$0.9912
  • 10:$1.2540
  • 1:$1.4200
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 2500:$0.5499
IPD80R1K4CEATMA1
DISTI # 26899231		Infineon Technologies AGTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R2450
  • 1000:$0.5060
  • 500:$0.5901
  • 250:$0.6796
  • 100:$0.6814
  • 25:$0.8258
  • 15:$0.8408
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1		Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K4CEATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5139
  • 5000:$0.4949
  • 10000:$0.4779
  • 15000:$0.4609
  • 25000:$0.4529
IPD80R1K4CEATMA1
DISTI # SP001130972		Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R (Alt: SP001130972)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.7819
  • 5000:€0.6099
  • 10000:€0.5449
  • 15000:€0.4959
  • 25000:€0.4649
IPD80R1K4CEATMA1
DISTI # 13AC9051		Infineon Technologies AGMOSFET, N-CH, 800V, 3.9A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$1.1800
  • 10:$1.0000
  • 25:$0.9230
  • 50:$0.8450
  • 100:$0.7680
  • 250:$0.7240
  • 500:$0.6790
  • 1000:$0.5360
IPD80R1K4CEATMA1
DISTI # 726-IPD80R1K4CEATMA1		Infineon Technologies AGMOSFET N-Ch 800V 3.9A DPAK-243861
  • 1:$1.1800
  • 10:$1.0000
  • 100:$0.7680
  • 500:$0.6790
  • 1000:$0.5360
IPD80R1K4CEATMA1
DISTI # 2726058		Infineon Technologies AGMOSFET, N-CH, 800V, 3.9A, TO-252-3
RoHS: Compliant		1324
  • 1:$2.2500
  • 10:$1.9900
  • 100:$1.5700
IPD80R1K4CEATMA1
DISTI # C1S322000579253		Infineon Technologies AGMOSFETs
RoHS: Compliant		2450
  • 250:$0.6796
  • 100:$0.6814
  • 25:$0.8258
  • 10:$0.8408
IPD80R1K4CEATMA1
DISTI # XSFP00000152672		Infineon Technologies AGHalf Bridge Based MOSFET Driver, 0.35A, CMOS,PDSO14
RoHS: Compliant		21872
  • 2500:$1.1900
  • 21872:$1.0800
IPD80R1K4CEATMA1
DISTI # 2726058		Infineon Technologies AGMOSFET, N-CH, 800V, 3.9A, TO-252-3
RoHS: Compliant		1514
  • 5:£0.8500
  • 25:£0.7650
  • 100:£0.5870
  • 250:£0.5530
  • 500:£0.5190
Bild Teil # Beschreibung
IPD80R1K4P7ATMA1

Mfr.#: IPD80R1K4P7ATMA1

OMO.#: OMO-IPD80R1K4P7ATMA1

 MOSFET
IPD80R1K4CEATMA1

Mfr.#: IPD80R1K4CEATMA1

OMO.#: OMO-IPD80R1K4CEATMA1

 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K4CEBTMA1

Mfr.#: IPD80R1K4CEBTMA1

OMO.#: OMO-IPD80R1K4CEBTMA1

 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K0CE

Mfr.#: IPD80R1K0CE

OMO.#: OMO-IPD80R1K0CE-1190

 Trans MOSFET N 800V 5.7A 3-Pin TO-252 T/R (Alt: IPD80R1K0CE)
IPD80R1K0CEATMA1

Mfr.#: IPD80R1K0CEATMA1

OMO.#: OMO-IPD80R1K0CEATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 5.7A TO252-3
IPD80R1K0CEBTMA1 , 2SD24

Mfr.#: IPD80R1K0CEBTMA1 , 2SD24

OMO.#: OMO-IPD80R1K0CEBTMA1-2SD24-1190

 Neu und Original
IPD80R1K2P7ATMA1

Mfr.#: IPD80R1K2P7ATMA1

OMO.#: OMO-IPD80R1K2P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 4.5A TO252-3
IPD80R1K4CEBTMA1 , 2SD24

Mfr.#: IPD80R1K4CEBTMA1 , 2SD24

OMO.#: OMO-IPD80R1K4CEBTMA1-2SD24-1190

 Neu und Original
IPD80R1K4P7ATMA1

Mfr.#: IPD80R1K4P7ATMA1

OMO.#: OMO-IPD80R1K4P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 4A DPAK
IPD80R1K0CEBTMA1

Mfr.#: IPD80R1K0CEBTMA1

OMO.#: OMO-IPD80R1K0CEBTMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 800V 5.7A DPAK-2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IPD80R1K4CEATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,68 $
0,68 $
10
0,65 $
6,45 $
100
0,61 $
61,14 $
500
0,58 $
288,70 $
1000
0,54 $
543,50 $
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