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STU80N4F6

STU80N4F6
Mfr. #:
STU80N4F6
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N CH 40V 80A IPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STU80N4F6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
STU80N4F6 Mehr Informationen STU80N4F6 Product Details
Produkteigenschaft
Attributwert
Hersteller
STMicroelectronics
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
N-Kanal-StripFET
Verpackung
Rohr
Gewichtseinheit
0.139332 oz
Montageart
Durchgangsloch
Handelsname
StripFET
Paket-Koffer
IPAK-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
70 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
11.9 ns
Anstiegszeit
7.6 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
80 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Widerstand
5.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
46.1 ns
Typische-Einschaltverzögerungszeit
10.5 ns
Qg-Gate-Ladung
36 nC
Kanal-Modus
Erweiterung
Tags
STU8, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 40 V, 5.8 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package
***r Electronics
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***Yang
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET - Bulk
***ser
MOSFETs 30V N-Channel PowerTrench
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS
***ical
Trans MOSFET N-CH Si 40V 100A Automotive 3-Pin(3+Tab) IPAK Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.2pF 50Volts C0G +/-0.50pF
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET, 40V, 100A, Q101, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-251AA; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, IPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 75A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET, N CH, 30V, 75A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; MSL:- RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 75A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***ser
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
***r Electronics
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***Yang
NFET DPAK 30V 76A 6MOHM - Rail/Tube
***or
MOSFET N-CH 30V 11.3A/79A IPAK
***th Star Micro
Not recommended for new design. Use NTD4906N
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
STU80N4F6
DISTI # 30615503		STMicroelectronicsTrans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		50
  • 33:$0.7625
STU80N4F6
DISTI # 497-13657-5-ND		STMicroelectronicsMOSFET N CH 40V 80A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2377In Stock
  • 525:$1.0841
  • 150:$1.3195
  • 75:$1.5488
  • 10:$1.6420
  • 1:$1.8300
STU80N4F6
DISTI # C1S730200785376		STMicroelectronicsTrans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		50
  • 50:$0.6030
  • 1:$0.6100
STU80N4F6
DISTI # 89W1526		STMicroelectronicsPTD LOW VOLTAGE0
  • 5000:$0.7670
  • 2500:$0.7910
  • 1000:$0.9800
  • 500:$1.1000
  • 100:$1.1800
  • 10:$1.4700
  • 1:$1.7300
STU80N4F6
DISTI # 511-STU80N4F6		STMicroelectronicsMOSFET N-Ch 40 V 5.8 mOhm 80 A STripFET(TM)
RoHS: Compliant		2887
  • 1:$1.7400
  • 10:$1.4800
  • 100:$1.1800
  • 500:$1.0400
  • 1000:$0.8560
  • 3000:$0.7970
  • 6000:$0.7680
  • 9000:$0.7380
Bild Teil # Beschreibung
STU8NM60ND

Mfr.#: STU8NM60ND

OMO.#: OMO-STU8NM60ND

 MOSFET N-CH 6V 7A FDMESH FDMesh
STU80N4F6

Mfr.#: STU80N4F6

OMO.#: OMO-STU80N4F6-STMICROELECTRONICS

 MOSFET N CH 40V 80A IPAK
STU816S

Mfr.#: STU816S

OMO.#: OMO-STU816S-1190

 Neu und Original
STU83003

Mfr.#: STU83003

OMO.#: OMO-STU83003-1190

 Power Bipolar Transistors (Alt: STU83003)
STU8438CU

Mfr.#: STU8438CU

OMO.#: OMO-STU8438CU-1190

 Neu und Original
STU8N65M5

Mfr.#: STU8N65M5

OMO.#: OMO-STU8N65M5-STMICROELECTRONICS

 MOSFET N-CH 650V 7A IPAK
STU8N80K5

Mfr.#: STU8N80K5

OMO.#: OMO-STU8N80K5-STMICROELECTRONICS

 MOSFET N CH 800V 6A IPAK
STU8NA80

Mfr.#: STU8NA80

OMO.#: OMO-STU8NA80-1190

 Neu und Original
STU8NM50N

Mfr.#: STU8NM50N

OMO.#: OMO-STU8NM50N-STMICROELECTRONICS

 MOSFET N-CH 500V 5A IPAK
STU8NM60ND

Mfr.#: STU8NM60ND

OMO.#: OMO-STU8NM60ND-STMICROELECTRONICS

 MOSFET N-CH 600V 7A IPAK
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von STU80N4F6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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