STU8N65M5

STU8N65M5
Mfr. #:
STU8N65M5
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 650V 7A IPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STU8N65M5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STU8N65M5 Mehr Informationen STU8N65M5 Product Details
Produkteigenschaft
Attributwert
Tags
STU8N, STU8, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) IPAK Tube
***an P&S
650V,7A,N-channel Power MOSFET
***Components
MOSFET N-Channel 650V 7A IPAK
***i-Key
MOSFET N-CH 650V 7A IPAK
***ark
MOSFET, N CH, 650V, 7A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 650V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***nell
MOSFET, CANALE N, 650V, 7A, IPAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:7A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.56ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:70W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
STU8N65M5
DISTI # 497-11365-5-ND
STMicroelectronicsMOSFET N-CH 650V 7A IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube
Limited Supply - Call
    STU8N65M5
    DISTI # 511-STU8N65M5
    STMicroelectronicsMOSFET N-Ch 650V 0.56 Ohm 7A Mdmesh V
    RoHS: Compliant
    0
      STU8N65M5STMicroelectronics650V,7A,0.56,N-channel Power MOSFET200
      • 1:$0.6900
      • 100:$0.6900
      • 500:$0.6900
      • 1000:$0.6900
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von STU8N65M5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,04 $
      1,04 $
      10
      0,98 $
      9,83 $
      100
      0,93 $
      93,15 $
      500
      0,88 $
      439,90 $
      1000
      0,83 $
      828,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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