STU8N

STU8N80K5 vs STU8NM50N vs STU8N65M5

 
PartNumberSTU8N80K5STU8NM50NSTU8N65M5
DescriptionMOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protectedMOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II MosMOSFET N-CH 650V 7A IPAK
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-251-3TO-251-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V500 V-
Id Continuous Drain Current6 A5 A-
Rds On Drain Source Resistance950 mOhms730 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge16.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation110 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameSuperMESH--
PackagingTubeTube-
SeriesSTU8N80K5STU8NM50N-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time20 ns--
Product TypeMOSFETMOSFET-
Rise Time14 ns--
Factory Pack Quantity300075-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.139332 oz0.139332 oz-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STU8N80K5 MOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected
STU8NM50N MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II Mos
STU8NM60ND MOSFET N-CH 6V 7A FDMESH FDMesh
STU8N65M5 MOSFET N-CH 650V 7A IPAK
STU8N80K5 MOSFET N CH 800V 6A IPAK
STU8NM50N MOSFET N-CH 500V 5A IPAK
STU8NM60ND MOSFET N-CH 600V 7A IPAK
STU8NA80 Neu und Original
STU8NB90 Neu und Original
STU8NB90I Neu und Original
STU8NC80Z Neu und Original
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