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STU8N80K5

STU8N80K5
Mfr. #:
STU8N80K5
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STU8N80K5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STU8N80K5 Mehr Informationen STU8N80K5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
6 A
Rds On - Drain-Source-Widerstand:
950 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
16.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
110 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperMESH
Verpackung:
Rohr
Serie:
STU8N80K5
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
32 ns
Typische Einschaltverzögerungszeit:
12 ns
Gewichtseinheit:
0.139332 oz
Tags
STU8N, STU8, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in IPAK package
***ure Electronics
N-Channel 800 V 6 A 950 mOhm Through Hole SuperMESH™ 5 Power Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 6A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 800 V, 0.95 Ohm typ., 6 A MDmesh K5 Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 6A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***enic
800V 6A 950m´Î@10V3A 110W 4V@100uA 1pF@100V N Channel 360pF@100V 13.4nC@0~10V -55¡Í~+150¡Í@(Tj) TO-251-3(IPAK) MOSFETs ROHS
***ical
Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube
***ronik
N-CH 800V 5,7A 950mOhm TO251-3
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***ineon SCT
800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage, PG-TO251-3, RoHS
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package
***ark
Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes
*** Electronics
STMICROELECTRONICS STU11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
***ical
Trans MOSFET N-CH 700V 7.4A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 7.4A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:7.4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MDmesh K5 Power MOSFETs
STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies and welding. The K5 series are available at 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics SuperMESH High Voltage MOSFETs - Thru-Hole
Teil # Mfg. Beschreibung Aktie Preis
STU8N80K5
DISTI # 497-13658-5-ND		STMicroelectronicsMOSFET N CH 800V 6A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		28In Stock
  • 2550:$1.8060
  • 525:$2.2485
  • 150:$2.6413
  • 75:$3.0476
  • 10:$3.2240
  • 1:$3.5900
STU8N80K5
DISTI # STU8N80K5		STMicroelectronicsTrans MOSFET N-CH 800V 6A 3-Pin TO-251 Tube - Rail/Tube (Alt: STU8N80K5)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 18000:$1.5900
  • 30000:$1.5900
  • 12000:$1.6900
  • 6000:$1.7900
  • 3000:$1.8900
STU8N80K5
DISTI # 89W1525		STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$1.6800
  • 250:$1.7300
  • 100:$2.0700
  • 50:$2.3900
  • 25:$2.5500
  • 10:$2.9100
  • 1:$3.3600
STU8N80K5
DISTI # 511-STU8N80K5		STMicroelectronicsMOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected
RoHS: Compliant		0
  • 1:$3.4200
  • 10:$2.9100
  • 100:$2.5200
  • 250:$2.3900
  • 500:$2.1500
  • 1000:$1.8100
  • 3000:$1.7200
STU8N80K5
DISTI # 7917958P		STMicroelectronicsPOWER MOSFET N CH SUPERMESH 5 800V 6A, TU2800
  • 25:£0.6380
STU8N80K5
DISTI # 7917958		STMicroelectronicsPOWER MOSFET N CH SUPERMESH 5 800V 6A, PK200
  • 25:£0.6380
  • 5:£0.6540
Bild Teil # Beschreibung
STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B

 TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 185V Ipp 2A
STRVS280X02F

Mfr.#: STRVS280X02F

OMO.#: OMO-STRVS280X02F

 TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

 TVS DIODE 128V 185V SMB
STRVS280X02F

Mfr.#: STRVS280X02F

OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS

 TVS Diodes - Transient Voltage Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von STU8N80K5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,42 $
3,42 $
10
2,91 $
29,10 $
100
2,52 $
252,00 $
250
2,39 $
597,50 $
500
2,15 $
1 075,00 $
1000
1,81 $
1 810,00 $
3000
1,72 $
5 160,00 $
6000
1,66 $
9 960,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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