STU8N80K5 vs STU8N65M5 vs STU8NA80

 
PartNumberSTU8N80K5STU8N65M5STU8NA80
DescriptionMOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protectedMOSFET N-CH 650V 7A IPAK
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance950 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge16.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation110 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameSuperMESH--
PackagingTube--
SeriesSTU8N80K5--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.139332 oz--
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