IRF7341GTRPBF

IRF7341GTRPBF
Mfr. #:
IRF7341GTRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 55V 5.1A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7341GTRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRF7341GTRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Arrays
Serie
HEXFETR
Verpackung
Band & Spule (TR)
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur
-55°C ~ 175°C (TJ)
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
8-SO
FET-Typ
2 N-Channel (Dual)
Leistung max
2.4W
Drain-zu-Source-Spannung-Vdss
55V
Eingangskapazität-Ciss-Vds
780pF @ 25V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
5.1A
Rds-On-Max-Id-Vgs
50 mOhm @ 5.1A, 10V
Vgs-th-Max-Id
1V @ 250μA (Min)
Gate-Lade-Qg-Vgs
44nC @ 10V
Tags
IRF7341, IRF734, IRF73, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 55V 5.1A 8-Pin SOIC T/R
***ark
MOSFET, DUAL N-CHANNEL, 55V, 5.1A, SO-8, Q101 qualified, TAPE & REEL
***ineon SCT
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF7341GTRPBF
DISTI # 24580469
Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
RoHS: Compliant
4000
  • 40000:$0.7564
  • 24000:$0.7583
  • 16000:$0.7602
  • 8000:$0.7621
  • 4000:$0.7641
IRF7341GTRPBF
DISTI # IRF7341GTRPBF-ND
Infineon Technologies AGMOSFET N-CH 55V 5.1A
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$0.9281
IRF7341GTRPBF
DISTI # C1S322000647873
Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
RoHS: Compliant
4000
  • 4000:$0.8420
IRF7341GTRPBF
DISTI # IRF7341GTRPBF
Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7341GTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 4000
  • 4000:$0.7959
  • 8000:$0.7939
  • 16000:$0.7919
  • 24000:$0.7899
  • 40000:$0.7879
IRF7341GTRPBF
DISTI # 49AC0327
Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.1A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes3850
  • 1:$1.8400
  • 10:$1.5700
  • 25:$1.4600
  • 50:$1.3600
  • 100:$1.2500
  • 250:$1.1800
  • 500:$1.1000
  • 1000:$0.9070
IRF7341GTRPBF
DISTI # 942-IRF7341GTRPBF
Infineon Technologies AGMOSFET PLANAR_MOSFETS
RoHS: Compliant
3336
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 4000:$0.8130
IRF7341GTRPBF
DISTI # 2839483
Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
RoHS: Compliant
3850
  • 5:$3.3200
  • 25:$2.8900
  • 100:$2.3600
  • 250:$1.9900
  • 500:$1.7200
  • 1000:$1.6300
  • 5000:$1.5400
IRF7341GTRPBF
DISTI # 2839483
Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
RoHS: Compliant
3840
  • 1:£2.0100
  • 10:£1.5600
  • 100:£1.2000
Bild Teil # Beschreibung
IRF7341TRPBF

Mfr.#: IRF7341TRPBF

OMO.#: OMO-IRF7341TRPBF

MOSFET MOSFT DUAL NCh 55V 4.7A
IRF7342PBF

Mfr.#: IRF7342PBF

OMO.#: OMO-IRF7342PBF

MOSFET DUAL -55V P-CH 20V VGS 55V BVDSS
IRF7341GTRPBF

Mfr.#: IRF7341GTRPBF

OMO.#: OMO-IRF7341GTRPBF-INFINEON-TECHNOLOGIES

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IRF734PBF

Mfr.#: IRF734PBF

OMO.#: OMO-IRF734PBF-VISHAY

MOSFET N-CH 450V 4.9A TO-220AB
IRF7341TRPBF/IRF7341QTR

Mfr.#: IRF7341TRPBF/IRF7341QTR

OMO.#: OMO-IRF7341TRPBF-IRF7341QTR-1190

Neu und Original
IRF7342D2PBF

Mfr.#: IRF7342D2PBF

OMO.#: OMO-IRF7342D2PBF-INFINEON-TECHNOLOGIES

MOSFET P-CH 55V 3.4A 8-SOIC
IRF7343ITRPBF

Mfr.#: IRF7343ITRPBF

OMO.#: OMO-IRF7343ITRPBF-1190

MOSFET SO-8
IRF7343Q

Mfr.#: IRF7343Q

OMO.#: OMO-IRF7343Q-1190

Neu und Original
IRF7343QTRPBF

Mfr.#: IRF7343QTRPBF

OMO.#: OMO-IRF7343QTRPBF-INFINEON-TECHNOLOGIES

MOSFET N/P-CH 55V 8-SOIC
IRF7343TRPBF , 2SJ634

Mfr.#: IRF7343TRPBF , 2SJ634

OMO.#: OMO-IRF7343TRPBF-2SJ634-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IRF7341GTRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,13 $
1,13 $
10
1,08 $
10,78 $
100
1,02 $
102,11 $
500
0,96 $
482,20 $
1000
0,91 $
907,70 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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