PartNumber | IRF7341GTRPBF | IRF7341PBF | IRF7341QTRPBF |
Description | MOSFET PLANAR_MOSFETS | MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS | MOSFET 2N-CH 55V 5.1A 8-SOIC |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
Id Continuous Drain Current | 5.1 A | 4.7 A | - |
Rds On Drain Source Resistance | 65 mOhms, 65 mOhms | 65 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 29 nC, 29 nC | 24 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 150 C | - |
Pd Power Dissipation | 2.4 W | 2 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Tube | Digi-ReelR |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Forward Transconductance Min | 10.4 S, 10.4 S | - | - |
Fall Time | 12.5 ns, 12.5 ns | 13 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7.7 ns, 7.7 ns | 3.2 ns | - |
Factory Pack Quantity | 4000 | 3800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 31 ns, 31 ns | 32 ns | - |
Typical Turn On Delay Time | 9.2 ns, 9.2 ns | 8.3 ns | - |
Part # Aliases | SP001563394 | SP001577408 | - |
Unit Weight | 0.017870 oz | 0.019048 oz | - |
Type | - | Power MOSFET | - |
Series | - | - | HEXFETR |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-SO |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 2.4W |
Drain to Source Voltage Vdss | - | - | 55V |
Input Capacitance Ciss Vds | - | - | 780pF @ 25V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 5.1A |
Rds On Max Id Vgs | - | - | 50 mOhm @ 5.1A, 10V |
Vgs th Max Id | - | - | 1V @ 250μA |
Gate Charge Qg Vgs | - | - | 44nC @ 10V |