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SI1012X-T1-GE3

SI1012X-T1-GE3
Mfr. #:
SI1012X-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 20V 500MA SC89-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI1012X-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SI1012X-T1, SI1012X-T, SI1012X, SI1012, SI101, SI10, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ohm; ID 500mA; SC-89 (SOT-490); Halogeenfree
***ure Electronics
Single N-Channel 20 V 0.7 Ohm Surface Mount Power Mosfet - SC-89
***ment14 APAC
N CHANNEL MOSFET, 20V, 500mA, SC-89; Tra; N CHANNEL MOSFET, 20V, 500mA, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):700mohm; Rds(on) Test Voltage Vgs:6V; Threshold Voltage Vgs:900mV
Teil # Mfg. Beschreibung Aktie Preis
SI1012X-T1-GE3
DISTI # V72:2272_09215334		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant		994
  • 500:$0.2064
  • 250:$0.2641
  • 100:$0.2717
  • 10:$0.4198
  • 1:$0.5414
SI1012X-T1-GE3
DISTI # V36:1790_09215334		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant		0
  • 3000:$0.1500
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		51552In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		51552In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		48000In Stock
  • 75000:$0.1075
  • 30000:$0.1117
  • 15000:$0.1218
  • 6000:$0.1302
  • 3000:$0.1386
SI1012X-T1-GE3
DISTI # 25789785		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant		994
  • 42:$0.5414
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R (Alt: SI1012X-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1299
  • 18000:€0.1389
  • 12000:€0.1509
  • 6000:€0.1749
  • 3000:€0.2569
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R (Alt: SI1012X-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI1012X-T1-GE3
    DISTI # SI1012X-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R - Tape and Reel (Alt: SI1012X-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.1209
    • 18000:$0.1239
    • 12000:$0.1269
    • 6000:$0.1329
    • 3000:$0.1369
    SI1012X-T1-GE3
    DISTI # 16P3669    		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 500mA, SC-89,Transistor Polarity:N Channel,Continuous Drain Current Id:600mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:900mV RoHS Compliant: Yes0
    • 1000:$0.1840
    • 500:$0.2370
    • 250:$0.2630
    • 100:$0.2890
    • 50:$0.3390
    • 25:$0.3900
    • 1:$0.5050
    SI1012X-T1-GE3.
    DISTI # 26AC3307    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:500mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:900mV,Power Dissipation Pd:250mW,No. of Pins:3Pins RoHS Compliant: No0
    • 30000:$0.1240
    • 18000:$0.1280
    • 12000:$0.1310
    • 6000:$0.1370
    • 1:$0.1410
    SI1012X-T1-GE3
    DISTI # 70026402    		Vishay SiliconixMOSFET,Power,N-Ch,VDSS 20V,RDS(ON) 0.41Ohm,ID 500mA,SC-89 (SOT-490),Halogeenfree
    RoHS: Compliant    		0
    • 3000:$0.2200
    • 6000:$0.2030
    • 12000:$0.1950
    SI1012X-T1-GE3
    DISTI # 781-SI1012X-T1-GE3    		Vishay IntertechnologiesMOSFET 20V 0.6A 175mW 700mohm @ 4.5V
    RoHS: Compliant    		3158
    • 1:$0.5000
    • 10:$0.3860
    • 100:$0.2860
    • 500:$0.2350
    • 1000:$0.1820
    • 3000:$0.1660
    • 6000:$0.1550
    • 9000:$0.1450
    • 24000:$0.1370
    SI1012XT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		3000
      SI1012X-T1-GE3
      DISTI # 1690182      		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 500mA, SC-89
      RoHS: Compliant      		0
      • 1000:$0.2350
      • 500:$0.3130
      • 20:$0.4180
      SI1012X-T1-GE3Vishay IntertechnologiesMOSFET 20V 0.6A 175mW 700mohm @ 4.5V
      RoHS: Compliant      		Americas - 6000
        Bild Teil # Beschreibung
        SI1012X-T1-GE3

        Mfr.#: SI1012X-T1-GE3

        OMO.#: OMO-SI1012X-T1-GE3

        		 MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
        SI1012X-T1-E3

        Mfr.#: SI1012X-T1-E3

        OMO.#: OMO-SI1012X-T1-E3

        		 MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3
        SI1012X

        Mfr.#: SI1012X

        OMO.#: OMO-SI1012X-1190

        		 Neu und Original
        SI1012X-T1

        Mfr.#: SI1012X-T1

        OMO.#: OMO-SI1012X-T1-1190

        		 MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3
        SI1012X-T1-E3

        Mfr.#: SI1012X-T1-E3

        OMO.#: OMO-SI1012X-T1-E3-VISHAY

        		 MOSFET N-CH 20V 500MA SC89-3
        SI1012X-T1-GE3

        Mfr.#: SI1012X-T1-GE3

        OMO.#: OMO-SI1012X-T1-GE3-VISHAY

        		 MOSFET N-CH 20V 500MA SC89-3
        SI1012X-TI-GE3

        Mfr.#: SI1012X-TI-GE3

        OMO.#: OMO-SI1012X-TI-GE3-1190

        		 Neu und Original
        SI1012XT1G

        Mfr.#: SI1012XT1G

        OMO.#: OMO-SI1012XT1G-1190

        		 Neu und Original
        SI1012XT1GE3

        Mfr.#: SI1012XT1GE3

        OMO.#: OMO-SI1012XT1GE3-1190

        		 Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von SI1012X-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,16 $
        0,16 $
        10
        0,15 $
        1,53 $
        100
        0,15 $
        14,52 $
        500
        0,14 $
        68,55 $
        1000
        0,13 $
        129,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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