IXFH120N20P

IXFH120N20P
Mfr. #:
IXFH120N20P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 120 Amps 200V 0.022 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFH120N20P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH120N20P DatasheetIXFH120N20P Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFH120N20P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
22 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
152 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
714 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
21.46 mm
Länge:
16.26 mm
Serie:
IXFH120N20P
Transistortyp:
1 N-Channel
Typ:
PolarHT HiPerFET Leistungs-MOSFET
Breite:
5.3 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
40 S
Abfallzeit:
31 ns
Produktart:
MOSFET
Anstiegszeit:
35 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
100 ns
Typische Einschaltverzögerungszeit:
30 ns
Gewichtseinheit:
0.229281 oz
Tags
IXFH120N2, IXFH120, IXFH12, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET TRANSISTOR, N CHANNEL, 120 A, 200 V, 22 MOHM, 10 V, 5 V ROHS COMPLIANT: YES
***Components
In a Tube of 30, N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXYS IXFH120N20P
***ure Electronics
Single N-Channel 200 Vds 22 mOhm 714 W Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
***i-Key
MOSFET N-CH 200V 120A TO-247
***ment14 APAC
Prices include import duty and tax. MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:714W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6000pF; Current Id Max:120A; Junction to Case Thermal Resistance A:0.21°C/W; N-channel Gate Charge:152nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.022ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:714W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017); Capacità Ciss Tipica:6000pF; Carica Gate Canale N:152nC; Corrente Id Max:120A; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Resistenza Termica A da Giunzione a Case:0.21°C/W; Temperatura di Esercizio Min:-55°C; Tempo di Recupero Inverso trr Max:200ns; Tensione Vds Tipica:200V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Foro Passante
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFH120N20P
DISTI # V99:2348_15877137
IXYS CorporationTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
32
  • 1000:$5.3560
  • 500:$5.5679
  • 250:$6.0740
  • 100:$6.6070
  • 50:$6.7990
  • 25:$7.2860
  • 10:$8.5150
  • 1:$9.3350
IXFH120N20P
DISTI # IXFH120N20P-ND
IXYS CorporationMOSFET N-CH 200V 120A TO-247
RoHS: Compliant
Min Qty: 30
Container: Box
Temporarily Out of Stock
  • 30:$8.6367
IXFH120N20P
DISTI # 31066494
IXYS CorporationTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
60
  • 500:$5.9808
  • 250:$6.5664
  • 100:$7.1904
  • 50:$7.3536
  • 25:$7.9104
  • 10:$9.5136
  • 2:$10.5696
IXFH120N20P
DISTI # 26536747
IXYS CorporationTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
32
  • 25:$7.2860
  • 10:$8.5150
  • 2:$9.3350
IXFH120N20P
DISTI # 58M7590
IXYS CorporationMOSFET Transistor, N Channel, 120 A, 200 V, 22 mohm, 10 V, 5 V RoHS Compliant: Yes38
  • 1:$11.0100
  • 10:$9.9100
  • 25:$8.2400
  • 50:$7.6600
  • 100:$7.4900
  • 250:$6.8400
  • 500:$6.2300
IXFH120N20P
DISTI # 747-IXFH120N20P
IXYS CorporationMOSFET 120 Amps 200V 0.022 Rds
RoHS: Compliant
182
  • 1:$11.0100
  • 10:$9.9100
  • 25:$8.2400
  • 50:$7.6600
  • 100:$7.4900
  • 250:$6.8400
  • 500:$6.2300
  • 1000:$5.9500
IXFH120N20P
DISTI # 193458P
IXYS CorporationMOSFET N-CHANNEL 200V 120A TO247, TU64
  • 5:£6.5300
  • 20:£6.1800
  • 50:£5.9000
  • 100:£5.1200
IXFH120N20P
DISTI # 193458
IXYS CorporationMOSFET N-CHANNEL 200V 120A TO247, EA27
  • 1:£7.0700
  • 5:£6.5300
  • 20:£6.1800
  • 50:£5.9000
  • 100:£5.1200
IXFH120N20P
DISTI # C1S331700014300
IXYS CorporationTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
32
  • 25:$7.2860
  • 10:$8.5150
  • 1:$9.3350
IXFH120N20P
DISTI # C1S331700119234
IXYS CorporationTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
60
  • 50:$8.7500
  • 25:$9.5300
  • 10:$9.7500
  • 1:$14.3000
IXFH120N20P
DISTI # 1427287
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
38
  • 1:$17.4200
  • 10:$15.6800
  • 25:$13.0500
  • 50:$12.1200
  • 100:$11.8600
  • 250:$10.8300
  • 500:$9.8600
  • 1000:$9.4200
IXFH120N20P
DISTI # 1427287
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
38
  • 1:£9.2500
  • 5:£8.6600
  • 10:£6.4800
  • 50:£6.0200
  • 100:£5.9000
Bild Teil # Beschreibung
SX1272IMLTRT

Mfr.#: SX1272IMLTRT

OMO.#: OMO-SX1272IMLTRT

RF Transceiver HIGH LINK BUDGET TRANSCEIVER
C2M0080120D

Mfr.#: C2M0080120D

OMO.#: OMO-C2M0080120D

MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
FDB52N20TM

Mfr.#: FDB52N20TM

OMO.#: OMO-FDB52N20TM

MOSFET 200V N-Ch MOSFET
SN74LVC1G86QDCKTQ1

Mfr.#: SN74LVC1G86QDCKTQ1

OMO.#: OMO-SN74LVC1G86QDCKTQ1

Logic Gates SINGLE 2-INPUT EXCLUSIVE-OR GATE
74LVC2G02DP,125

Mfr.#: 74LVC2G02DP,125

OMO.#: OMO-74LVC2G02DP-125

Logic Gates 3.3V DUAL 2-INPUT
EEE-FK1E101SP

Mfr.#: EEE-FK1E101SP

OMO.#: OMO-EEE-FK1E101SP

Aluminum Electrolytic Capacitors - SMD 25volts 100uF SMD AEC-Q200 Reflow Only
T495D226K035ATE260

Mfr.#: T495D226K035ATE260

OMO.#: OMO-T495D226K035ATE260

Tantalum Capacitors - Solid SMD 35V 22uF 2917 10% ESR=260mOhms
T495D226K035ATE260

Mfr.#: T495D226K035ATE260

OMO.#: OMO-T495D226K035ATE260-KEMET

Cap Tant Solid 22uF 35V D CASE 10% (7.3 X 4.3 X 2.8mm) Inward L SMD 7343-31 0.26 Ohm 125C Automotive T/R
C2M0080120D

Mfr.#: C2M0080120D

OMO.#: OMO-C2M0080120D-WOLFSPEED

MOSFET N-CH 1200V 31.6A TO247
EEE-FK1E101SP

Mfr.#: EEE-FK1E101SP

OMO.#: OMO-EEE-FK1E101SP-PANASONIC

Cap Aluminum Lytic 100uF 25V 20% (6.3 X 5.8mm) SMD 0.36 Ohm 240mA 2000h 105C Automotive T/R
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von IXFH120N20P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,01 $
11,01 $
10
9,91 $
99,10 $
25
7,85 $
196,25 $
50
7,66 $
383,00 $
100
7,49 $
749,00 $
250
6,84 $
1 710,00 $
500
6,23 $
3 115,00 $
1000
5,95 $
5 950,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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