IXFH120N20P vs IXFH120N25X3 vs IXFH120N25T

 
PartNumberIXFH120N20PIXFH120N25X3IXFH120N25T
DescriptionMOSFET 120 Amps 200V 0.022 RdsMOSFET DISCMSFT NCHULTRJNCTN X3CLASSMOSFET Trench HiperFETs Power MOSFETs
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-247-3-TO-247-3
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage200 V-250 V
Id Continuous Drain Current120 A-120 A
Rds On Drain Source Resistance22 mOhms-23 mOhms
Vgs th Gate Source Threshold Voltage5 V-5 V
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge152 nC-180 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 150 C
Pd Power Dissipation714 W-890 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTubeTube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH120N20P-IXFH120N25T
Transistor Type1 N-Channel-1 N-Channel
TypePolarHT HiPerFET Power MOSFET--
Width5.3 mm--
BrandIXYSIXYSIXYS
Forward Transconductance Min40 S--
Fall Time31 ns-19 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time35 ns-16 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns-46 ns
Typical Turn On Delay Time30 ns-32 ns
Unit Weight0.229281 oz-0.056438 oz
Top