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NGTB30N120FL2WG

NGTB30N120FL2WG
Mfr. #:
NGTB30N120FL2WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 1200V/30A FAST IGBT FSII
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB30N120FL2WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
NGTB30N120FL2WG Mehr Informationen
Produkteigenschaft
Attributwert
Tags
NGTB30N12, NGTB30N1, NGTB30, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
***Semiconductor
IGBT, 1200V 30A FS2 Solar/UPS
***i-Key
IGBT 1200V 60A 452W TO247
***S
new, original packaged
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
NGTBxxN120L Motor Drive IGBTs
ON Semiconductor's NGTBxxN120L Motor Drive IGBTs feature a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. They are available 1200 V in 15 A, 20 A and 25 A rated versions. These IGBTs are well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB30N120FL2WG
DISTI # NGTB30N120FL2WGOS-ND		ON SemiconductorIGBT 1200V 60A 452W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		42In Stock
  • 2520:$3.1304
  • 510:$3.9071
  • 120:$4.5897
  • 30:$5.2957
  • 10:$5.6020
  • 1:$6.2400
NGTB30N120FL2WG
DISTI # NGTB30N120FL2WG		ON SemiconductorTrans IGBT Chip N-CH 1200V 60A 3-Pin TO-247 Rail - Bulk (Alt: NGTB30N120FL2WG)
RoHS: Compliant
Min Qty: 66
Container: Bulk		Americas - 0
  • 660:$4.5900
  • 198:$4.7900
  • 330:$4.7900
  • 66:$4.8900
  • 132:$4.8900
NGTB30N120FL2WG
DISTI # NGTB30N120FL2WG		ON SemiconductorTrans IGBT Chip N-CH 1200V 60A 3-Pin TO-247 Rail (Alt: NGTB30N120FL2WG)
RoHS: Compliant
Min Qty: 90		Asia - 0
  • 4500:$5.7000
  • 2250:$5.7966
  • 900:$5.8966
  • 450:$6.1071
  • 270:$6.3333
  • 180:$6.5769
  • 90:$6.8400
NGTB30N120FL2WG
DISTI # 28X8010		ON SemiconductorIGBT, SINGLE, 1.2KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:452W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
  • 2500:$4.7200
  • 1000:$5.1000
  • 500:$5.6100
  • 250:$6.1200
  • 100:$6.6700
  • 25:$7.3600
  • 10:$8.0400
  • 1:$8.8900
NGTB30N120FL2WG
DISTI # 863-NGTB30N120FL2WG		ON SemiconductorIGBT Transistors 1200V/30A FAST IGBT FSII
RoHS: Compliant		198
  • 1:$8.1400
  • 10:$7.3600
  • 25:$7.0200
  • 100:$6.0900
NGTB30N120FL2WGON SemiconductorInsulated Gate Bipolar Transistor
RoHS: Compliant		3660
  • 1000:$3.2800
  • 500:$3.4500
  • 100:$3.5900
  • 25:$3.7400
  • 1:$4.0300
NGTB30N120FL2WG
DISTI # 7961337P		ON SemiconductorIGBT 1200V 30A FIELD STOP 2DIODE TO247, TU101
  • 40:£5.2650
  • 20:£5.5150
NGTB30N120FL2WG
DISTI # 2399107		ON Semiconductor 
RoHS: Compliant		0
  • 100:$9.3700
  • 25:$10.8000
  • 10:$11.3200
  • 1:$12.5200
Bild Teil # Beschreibung
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Mfr.#: NGTB30N60L2WG

OMO.#: OMO-NGTB30N60L2WG

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Mfr.#: NGTB30N135IHRWG

OMO.#: OMO-NGTB30N135IHRWG

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NGTB30N60SWG

Mfr.#: NGTB30N60SWG

OMO.#: OMO-NGTB30N60SWG

 IGBT Transistors 600V/30A IGBT FSI TO-247
NGTB30N120IHSWG

Mfr.#: NGTB30N120IHSWG

OMO.#: OMO-NGTB30N120IHSWG

 IGBT Transistors 1200/30A IGBT LPT TO-24
NGTB30N140IHR3WG

Mfr.#: NGTB30N140IHR3WG

OMO.#: OMO-NGTB30N140IHR3WG-1190

 Neu und Original
NGTB30N120L2WG

Mfr.#: NGTB30N120L2WG

OMO.#: OMO-NGTB30N120L2WG-ON-SEMICONDUCTOR

 IGBT Transistors 1200V/30A LOW VCE SAT FSII
NGTB30N60FWG

Mfr.#: NGTB30N60FWG

OMO.#: OMO-NGTB30N60FWG-ON-SEMICONDUCTOR

 IGBT Transistors 600V/30A IGBT NPT TO-247
NGTB30N120IHLWG

Mfr.#: NGTB30N120IHLWG

OMO.#: OMO-NGTB30N120IHLWG-ON-SEMICONDUCTOR

 IGBT Transistors 1200V/30A FS1 IGBT IH
NGTB30N60SWG

Mfr.#: NGTB30N60SWG

OMO.#: OMO-NGTB30N60SWG-ON-SEMICONDUCTOR

 IGBT Transistors 600V/30A IGBT FSI TO-247
NGTB30N60FL

Mfr.#: NGTB30N60FL

OMO.#: OMO-NGTB30N60FL-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von NGTB30N120FL2WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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