NGTB30N12 stock, NGTB30N12, NGTB30N120FL2WG


PartNumber	NGTB30N120FL2WG	NGTB30N120IHRWG	NGTB30N120IHLWG
Description	IGBT Transistors 1200V/30A FAST IGBT FSII	IGBT Transistors 1200V/30A RC IGBT FSII	IGBT Transistors 1200V/30A FS1 IGBT IH
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	IGBT Transistors	IGBT Transistors	-
RoHS	Y	Y	-
Technology	Si	Si	-
Package / Case	TO-247	TO-247	-
Mounting Style	Through Hole	Through Hole	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	1200 V	1200 V	-
Collector Emitter Saturation Voltage	2 V	2.2 V	-
Maximum Gate Emitter Voltage	30 V	25 V	-
Continuous Collector Current at 25 C	60 A	60 A	-
Pd Power Dissipation	452 W	384 W	-
Minimum Operating Temperature	- 55 C	- 40 C	-
Maximum Operating Temperature	+ 175 C	+ 175 C	-
Series	NGTB30N120FL2	NGTB30N120IHR	-
Packaging	Tube	Tube	-
Brand	ON Semiconductor	ON Semiconductor	-
Gate Emitter Leakage Current	200 nA	100 nA	-
Product Type	IGBT Transistors	IGBT Transistors	-
Factory Pack Quantity	30	30	-
Subcategory	IGBTs	IGBTs	-
Unit Weight	0.229281 oz	0.229281 oz	-

Search Part Number : "NGTB30N12", Match & Start with "NGTB30N12" - Total : 10

Hersteller	Teil #	Beschreibung
	NGTB30N120FL2WG	IGBT Transistors 1200V/30A FAST IGBT FSII
	NGTB30N120IHRWG	IGBT Transistors 1200V/30A RC IGBT FSII
	NGTB30N120L2WG	IGBT Transistors 1200V/30A LOW VCE SAT FSII
ON Semiconductor	NGTB30N120IHSWG	IGBT Transistors 1200/30A IGBT LPT TO-24
	NGTB30N120IHRWG	IGBT Transistors 1200V/30A RC IGBT FSII
	NGTB30N120L2WG	IGBT Transistors 1200V/30A LOW VCE SAT FSII
	NGTB30N120IHLWG	IGBT Transistors 1200V/30A FS1 IGBT IH
	NGTB30N120LWG	IGBT Transistors 1200V/30A FS1 IGBT
	NGTB30N120IHSWG	IGBT Transistors 1200/30A IGBT LPT TO-247
	NGTB30N120FL2WG	IGBT Transistors 1200V/30A FAST IGBT FSII

NGTB30N12