NGTB30N120IHRWG

NGTB30N120IHRWG
Mfr. #:
NGTB30N120IHRWG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 1200V/30A RC IGBT FSII
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB30N120IHRWG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
NGTB30N120IHRWG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
ON Semiconductor
Produktkategorie
IGBTs - Single
Serie
NGTB30N120IHR
Verpackung
Rohr
Gewichtseinheit
0.229281 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Aufbau
Single
Leistung max
384W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
60A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
120A
Vce-on-Max-Vge-Ic
2.5V @ 15V, 30A
Schaltenergie
700μJ (off)
Gate-Gebühr
225nC
Td-ein-aus-25°C
-/230ns
Testbedingung
600V, 30A, 10 Ohm, 15V
Pd-Verlustleistung
384 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 40 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Kollektor-Emitter-Sättigungsspannung
2.2 V
Kontinuierlicher Kollektorstrom-bei-25-C
60 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
25 V
Tags
NGTB30N120I, NGTB30N12, NGTB30N1, NGTB30, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 60A 384000mW 3-Pin(3+Tab) TO-247 Tube
***Semiconductor
IGBT, 1200V 30A FS2-RC Induction Heating
***nell
TRANSISTOR, IGBT, 2.2V, 60A, TO-247-3
***ark
Transistor, Igbt, 2.2V, 60A, To-247-3; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:384W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins;rohs Compliant: Yes
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB30N120IHRWG
DISTI # V99:2348_07300156
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
22
  • 1000:$2.5240
  • 500:$2.9130
  • 100:$3.2060
  • 10:$3.5990
  • 1:$4.1000
NGTB30N120IHRWG
DISTI # NGTB30N120IHRWGOS-ND
ON SemiconductorIGBT 1200V 60A 384W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
210In Stock
  • 1020:$2.6313
  • 510:$3.1200
  • 120:$3.6650
  • 30:$4.2290
  • 1:$4.9800
NGTB30N120IHRWG
DISTI # 28972727
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
32040
  • 180:$2.9750
NGTB30N120IHRWG
DISTI # 25863340
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
22
  • 10:$3.5990
  • 3:$4.1000
NGTB30N120IHRWG
DISTI # NGTB30N120IHRWG
ON SemiconductorTrans IGBT Chip N-CH 1.2kV 60A 3-Pin TO-247 Rail (Alt: NGTB30N120IHRWG)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€2.7900
  • 10:€2.5900
  • 25:€2.4900
  • 50:€2.3900
  • 100:€2.2900
  • 500:€2.1900
  • 1000:€2.0900
NGTB30N120IHRWG
DISTI # 80Y3319
ON SemiconductorTRANSISTOR, IGBT, 2.2V, 60A, TO-247-3,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:384W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins, , RoHS Compliant: Yes90
  • 1:$4.7400
  • 10:$4.0300
  • 25:$3.8500
  • 50:$3.6800
  • 100:$3.5000
NGTB30N120IHRWG
DISTI # 863-NGTB30N120IHRWG
ON SemiconductorIGBT Transistors 1200V/30A RC IGBT FSII
RoHS: Compliant
95
  • 1:$4.7400
  • 10:$4.0300
  • 100:$3.5000
  • 250:$3.3200
  • 500:$2.9800
  • 1000:$2.5100
  • 2500:$2.3900
NGTB30N120IHRWG
DISTI # 7961331P
ON SemiconductorIGBT 1200V 30A FIELD STOPDIODE TO247, TU112
  • 6:£3.2950
  • 12:£3.0300
  • 40:£2.8750
  • 80:£2.7950
NGTB30N120IHRWG
DISTI # 7961331
ON SemiconductorIGBT 1200V 30A FIELD STOPDIODE TO247, PK26
  • 2:£3.8100
  • 6:£3.2950
  • 12:£3.0300
  • 40:£2.8750
  • 80:£2.7950
NGTB30N120IHRWG
DISTI # 2399110
ON SemiconductorTRANSISTOR, IGBT, 2.2V, 60A, TO-247-3
RoHS: Compliant
90
  • 1:£4.4900
  • 10:£3.2500
  • 100:£2.8200
  • 250:£2.6700
  • 500:£2.5200
NGTB30N120IHRWG
DISTI # 2399110
ON SemiconductorTRANSISTOR, IGBT, 2.2V, 60A, TO-247-3
RoHS: Compliant
90
  • 1:$7.5000
  • 10:$6.3800
  • 100:$5.5400
NGTB30N120IHRWG
DISTI # C1S541900938258
ON SemiconductorTrans IGBT Chip N-CH 1200V 60A 384000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
22
  • 10:$3.5990
  • 1:$4.1000
Bild Teil # Beschreibung
NGTB30N120FL2WG

Mfr.#: NGTB30N120FL2WG

OMO.#: OMO-NGTB30N120FL2WG

IGBT Transistors 1200V/30A FAST IGBT FSII
NGTB30N60IHLWG

Mfr.#: NGTB30N60IHLWG

OMO.#: OMO-NGTB30N60IHLWG

IGBT Transistors 600V/30A IGBT FS1 IH TO-2
NGTB30N60FLWG

Mfr.#: NGTB30N60FLWG

OMO.#: OMO-NGTB30N60FLWG

IGBT Transistors 600V/30A IGBT LPT TO-247
NGTB30N65IHL2WG

Mfr.#: NGTB30N65IHL2WG

OMO.#: OMO-NGTB30N65IHL2WG-ON-SEMICONDUCTOR

IGBT Transistors 650V/30A FAST IGBT FSII T
NGTB30N135IHRWG

Mfr.#: NGTB30N135IHRWG

OMO.#: OMO-NGTB30N135IHRWG-ON-SEMICONDUCTOR

IGBT Transistors 1350V/30A IGBT FSII TO-24
NGTB30N120IHLWG

Mfr.#: NGTB30N120IHLWG

OMO.#: OMO-NGTB30N120IHLWG-ON-SEMICONDUCTOR

IGBT Transistors 1200V/30A FS1 IGBT IH
NGTB30N120LWG

Mfr.#: NGTB30N120LWG

OMO.#: OMO-NGTB30N120LWG-ON-SEMICONDUCTOR

IGBT Transistors 1200V/30A FS1 IGBT
NGTB30N60SWG

Mfr.#: NGTB30N60SWG

OMO.#: OMO-NGTB30N60SWG-ON-SEMICONDUCTOR

IGBT Transistors 600V/30A IGBT FSI TO-247
NGTB30N120IHSWG

Mfr.#: NGTB30N120IHSWG

OMO.#: OMO-NGTB30N120IHSWG-ON-SEMICONDUCTOR

IGBT Transistors 1200/30A IGBT LPT TO-247
NGTB30N60FLWG 30N60FL

Mfr.#: NGTB30N60FLWG 30N60FL

OMO.#: OMO-NGTB30N60FLWG-30N60FL-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von NGTB30N120IHRWG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,56 $
3,56 $
10
3,38 $
33,84 $
100
3,21 $
320,63 $
500
3,03 $
1 514,05 $
1000
2,85 $
2 850,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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