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BSZ120P03NS3E G

BSZ120P03NS3E G
Mfr. #:
BSZ120P03NS3E G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSZ120P03NS3E G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.1 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
45 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.3 mm
Serie:
OptiMOS P3
Transistortyp:
1 P-Channel
Breite:
3.3 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
22 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
BSZ120P03NS3EGATMA1 BSZ12P3NS3EGXT SP000709730
Tags
BSZ120P03NS3E, BSZ120P03NS, BSZ120P, BSZ120, BSZ12, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSZ120P03NS3EGATMA1
DISTI # V72:2272_06384848		Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant		905
  • 500:$0.2207
  • 250:$0.3041
  • 100:$0.3265
  • 25:$0.4316
  • 10:$0.4843
  • 1:$0.5652
BSZ120P03NS3EGATMA1
DISTI # V36:1790_06384848		Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
    BSZ120P03NS3EGATMA1
    DISTI # BSZ120P03NS3EGATMA1TR-ND    		Infineon Technologies AGMOSFET P-CH 30V 40A TSDSON-8
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5000:$0.2692
    BSZ120P03NS3EGATMA1
    DISTI # 32825692    		Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		5000
    • 5000:$0.2322
    BSZ120P03NS3EGATMA1
    DISTI # 31955319    		Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		905
    • 500:$0.2373
    • 250:$0.3269
    • 100:$0.3510
    • 35:$0.4640
    BSZ120P03NS3EGATMA1
    DISTI # BSZ120P03NS3EGATMA1    		Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ120P03NS3EGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.2089
    • 10000:$0.2014
    • 20000:$0.1941
    • 30000:$0.1876
    • 50000:$0.1842
    BSZ120P03NS3EGATMA1
    DISTI # SP000709730    		Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP (Alt: SP000709730)
    RoHS: Compliant
    Min Qty: 5000    		Europe - 0
    • 5000:€0.2849
    • 10000:€0.2329
    • 20000:€0.2139
    • 30000:€0.1969
    • 50000:€0.1829
    BSZ120P03NS3EGATMA1.
    DISTI # 31AC8239    		Infineon Technologies AGTransistor Polarity:P Channel,Continuous Drain Current Id:-40A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power Dissipation Pd:52W,No. of Pins:8Pins0
    • 50000:$0.2370
    • 20000:$0.2380
    • 10000:$0.2390
    • 1:$0.2400
    BSZ120P03NS3EGATMA1
    DISTI # 49AC0114    		Infineon Technologies AGMOSFET, P-CH, -30V, -40A, TSDSON-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-40A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes3240
    • 1000:$0.2910
    • 500:$0.3150
    • 250:$0.3390
    • 100:$0.3630
    • 50:$0.4290
    • 25:$0.4960
    • 10:$0.5620
    • 1:$0.6700
    BSZ120P03NS3E G
    DISTI # 726-BSZ120P03NS3EG    		Infineon Technologies AGMOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
    RoHS: Compliant    		0
    • 1:$0.6700
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    • 5000:$0.2450
    BSZ120P03NS3EGATMA1
    DISTI # 726-BSZ120P03NS3EGAT    		Infineon Technologies AGMOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
    RoHS: Compliant    		0
    • 1:$0.6700
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    • 5000:$0.2450
    BSZ120P03NS3EGInfineon Technologies AG 109
      BSZ120P03NS3EGATMA1
      DISTI # 2839439      		Infineon Technologies AGMOSFET, P-CH, -30V, -40A, TSDSON-8
      RoHS: Compliant      		3480
      • 100:£0.3460
      • 25:£0.5590
      • 5:£0.6050
      BSZ120P03NS3EGATMA1
      DISTI # 2839439      		Infineon Technologies AGMOSFET, P-CH, -30V, -40A, TSDSON-8
      RoHS: Compliant      		3240
      • 100:$0.6610
      • 25:$0.8100
      • 5:$0.9300
      BSZ120P03NS3EGInfineon Technologies AG-30V,-40A,P-channel power MOSFET100
      • 1:$0.4300
      • 100:$0.3600
      • 500:$0.3200
      • 1000:$0.3100
      Bild Teil # Beschreibung
      BSZ120P03NS3GATMA1

      Mfr.#: BSZ120P03NS3GATMA1

      OMO.#: OMO-BSZ120P03NS3GATMA1

      		 MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
      BSZ120P03NS3 G

      Mfr.#: BSZ120P03NS3 G

      OMO.#: OMO-BSZ120P03NS3-G

      		 MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
      BSZ120P03NS3EGATMA1

      Mfr.#: BSZ120P03NS3EGATMA1

      OMO.#: OMO-BSZ120P03NS3EGATMA1

      		 MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
      BSZ120P03N

      Mfr.#: BSZ120P03N

      OMO.#: OMO-BSZ120P03N-1190

      		 Neu und Original
      BSZ120P03NS3

      Mfr.#: BSZ120P03NS3

      OMO.#: OMO-BSZ120P03NS3-1190

      		 Neu und Original
      BSZ120P03NS3 G

      Mfr.#: BSZ120P03NS3 G

      OMO.#: OMO-BSZ120P03NS3-G-1190

      		 Trans MOSFET P-CH 30V 40A 8-Pin TSDSON T/R (Alt: BSZ120P03NS3 G)
      BSZ120P03NS3EG

      Mfr.#: BSZ120P03NS3EG

      OMO.#: OMO-BSZ120P03NS3EG-1190

      		 -30V,-40A,P-channel power MOSFET
      BSZ120P03NS3G

      Mfr.#: BSZ120P03NS3G

      OMO.#: OMO-BSZ120P03NS3G-1190

      		 Neu und Original
      BSZ120P03NS3GATMA1 , TG1

      Mfr.#: BSZ120P03NS3GATMA1 , TG1

      OMO.#: OMO-BSZ120P03NS3GATMA1-TG1-1190

      		 Neu und Original
      BSZ120P03NS3E G

      Mfr.#: BSZ120P03NS3E G

      OMO.#: OMO-BSZ120P03NS3E-G-317

      		 RF Bipolar Transistors MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1988
      Menge eingeben:
      Der aktuelle Preis von BSZ120P03NS3E G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,67 $
      0,67 $
      10
      0,56 $
      5,62 $
      100
      0,36 $
      36,30 $
      1000
      0,29 $
      291,00 $
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