W987D2HBJX7E TR

W987D2HBJX7E TR
Mfr. #:
W987D2HBJX7E TR
Hersteller:
Winbond
Beschreibung:
DRAM 128M mSDR, x32, 133MHz, 65nm T&R
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
W987D2HBJX7E TR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Winbond
Produktkategorie:
DRAM
Typ:
SDRAM-Mobilgerät - LPSDR
Datenbusbreite:
32 bit
Organisation:
4 M x 32
Paket / Koffer:
VFBGA-90
Speichergröße:
128 Mbit
Maximale Taktfrequenz:
133 MHz
Zugriffszeit:
8 ns
Versorgungsspannung - Max.:
1.95 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
70 mA
Minimale Betriebstemperatur:
- 25 C
Maximale Betriebstemperatur:
+ 85 C
Serie:
W987D2HB
Verpackung:
Spule
Marke:
Winbond
Montageart:
SMD/SMT
Produktart:
DRAM
Werkspackungsmenge:
2500
Unterkategorie:
Speicher & Datenspeicherung
Tags
W987D2, W987D, W987, W98
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC DRAM 128MBIT PARALLEL 90VFBGA
Teil # Mfg. Beschreibung Aktie Preis
W987D2HBJX7ETR
DISTI # V36:1790_07052484
Winbond Electronics Corp128M MSDR, X32, 133MHZ, 65NM T0
    W987D2HBJX7E TR
    DISTI # W987D2HBJX7ETR-ND
    Winbond Electronics CorpIC DRAM 128M PARALLEL 90VFBGA
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    Limited Supply - Call
    • 2500:$2.1839
    W987D2HBJX7E TR
    DISTI # 454-W987D2HBJX7ETR
    Winbond Electronics CorpDRAM 128M mSDR, x32, 133MHz, 65nm T&R0
      Bild Teil # Beschreibung
      W987D2HBJX6I

      Mfr.#: W987D2HBJX6I

      OMO.#: OMO-W987D2HBJX6I

      DRAM 128M mSDR, x32, 166MHz, Ind Temp
      W987D2HBJX6E

      Mfr.#: W987D2HBJX6E

      OMO.#: OMO-W987D2HBJX6E

      DRAM 128M mSDR, x32, 166MHz
      W987D2HBJX7E

      Mfr.#: W987D2HBJX7E

      OMO.#: OMO-W987D2HBJX7E

      DRAM 128M mSDR, x32, 133MHz, 65nm
      W987D2HBJX6I TR

      Mfr.#: W987D2HBJX6I TR

      OMO.#: OMO-W987D2HBJX6I-TR

      DRAM 128M mSDR, x32, 166MHz, Ind Temp T&R
      W987D2HBJX7E TR

      Mfr.#: W987D2HBJX7E TR

      OMO.#: OMO-W987D2HBJX7E-TR

      DRAM 128M mSDR, x32, 133MHz, 65nm T&R
      W987D2HBJX6I

      Mfr.#: W987D2HBJX6I

      OMO.#: OMO-W987D2HBJX6I-WINBOND-ELECTRONICS

      IC DRAM 128M PARALLEL 90VFBGA
      W987D2HBJX6E TR

      Mfr.#: W987D2HBJX6E TR

      OMO.#: OMO-W987D2HBJX6E-TR-WINBOND-ELECTRONICS

      IC DRAM 128M PARALLEL 90VFBGA
      W987D2HBJX7E TR

      Mfr.#: W987D2HBJX7E TR

      OMO.#: OMO-W987D2HBJX7E-TR-WINBOND-ELECTRONICS

      IC DRAM 128M PARALLEL 90VFBGA
      W987D2HBJX6I TR

      Mfr.#: W987D2HBJX6I TR

      OMO.#: OMO-W987D2HBJX6I-TR-WINBOND-ELECTRONICS

      IC DRAM 128M PARALLEL 90VFBGA
      W987D2HBJX7E

      Mfr.#: W987D2HBJX7E

      OMO.#: OMO-W987D2HBJX7E-WINBOND-ELECTRONICS

      IC DRAM 128M PARALLEL 90VFBGA
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von W987D2HBJX7E TR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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