W987D2HBJX7E

W987D2HBJX7E
Mfr. #:
W987D2HBJX7E
Hersteller:
Winbond
Beschreibung:
DRAM 128M mSDR, x32, 133MHz, 65nm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
W987D2HBJX7E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Winbond
Produktkategorie:
DRAM
Typ:
SDRAM-Mobilgerät - LPSDR
Datenbusbreite:
32 bit
Organisation:
4 M x 32
Paket / Koffer:
VFBGA-90
Speichergröße:
128 Mbit
Maximale Taktfrequenz:
133 MHz
Zugriffszeit:
8 ns
Versorgungsspannung - Max.:
1.95 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
70 mA
Minimale Betriebstemperatur:
- 25 C
Maximale Betriebstemperatur:
+ 85 C
Serie:
W987D2HB
Verpackung:
Tablett
Marke:
Winbond
Montageart:
SMD/SMT
Produktart:
DRAM
Werkspackungsmenge:
240
Unterkategorie:
Speicher & Datenspeicherung
Tags
W987D2, W987D, W987, W98
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC DRAM 128MBIT PARALLEL 90VFBGA
Teil # Mfg. Beschreibung Aktie Preis
W987D2HBJX7E
DISTI # W987D2HBJX7E-ND
Winbond Electronics CorpIC DRAM 128M PARALLEL 90VFBGA
RoHS: Compliant
Min Qty: 240
Container: Tray
Limited Supply - Call
  • 240:$2.4208
W987D2HBJX7E TR
DISTI # W987D2HBJX7ETR-ND
Winbond Electronics CorpIC DRAM 128M PARALLEL 90VFBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
  • 2500:$2.1839
W987D2HBJX7E
DISTI # 454-W987D2HBJX7E
Winbond Electronics CorpDRAM 128M mSDR, x32, 133MHz, 65nm0
  • 1:$3.0600
  • 10:$2.7600
  • 25:$2.7200
  • 50:$2.7100
  • 100:$2.4200
  • 250:$2.3400
  • 500:$2.3300
  • 1000:$2.1700
W987D2HBJX7E TR
DISTI # 454-W987D2HBJX7ETR
Winbond Electronics CorpDRAM 128M mSDR, x32, 133MHz, 65nm T&R0
  • 2500:$2.0100
Bild Teil # Beschreibung
W987D2HBJX6E

Mfr.#: W987D2HBJX6E

OMO.#: OMO-W987D2HBJX6E

DRAM 128M mSDR, x32, 166MHz
W987D2HBJX7E

Mfr.#: W987D2HBJX7E

OMO.#: OMO-W987D2HBJX7E

DRAM 128M mSDR, x32, 133MHz, 65nm
W987D2HBJX6I TR

Mfr.#: W987D2HBJX6I TR

OMO.#: OMO-W987D2HBJX6I-TR

DRAM 128M mSDR, x32, 166MHz, Ind Temp T&R
W987D2HBJX6E TR

Mfr.#: W987D2HBJX6E TR

OMO.#: OMO-W987D2HBJX6E-TR

DRAM 128M mSDR, x32, 166MHz T&R
W987D2HBJX7E TR

Mfr.#: W987D2HBJX7E TR

OMO.#: OMO-W987D2HBJX7E-TR

DRAM 128M mSDR, x32, 133MHz, 65nm T&R
W987D2HBJX6E TR

Mfr.#: W987D2HBJX6E TR

OMO.#: OMO-W987D2HBJX6E-TR-WINBOND-ELECTRONICS

IC DRAM 128M PARALLEL 90VFBGA
W987D2HBJX7E TR

Mfr.#: W987D2HBJX7E TR

OMO.#: OMO-W987D2HBJX7E-TR-WINBOND-ELECTRONICS

IC DRAM 128M PARALLEL 90VFBGA
W987D2HBJX6E

Mfr.#: W987D2HBJX6E

OMO.#: OMO-W987D2HBJX6E-WINBOND-ELECTRONICS

IC DRAM 128M PARALLEL 90VFBGA
W987D2HBJX6I TR

Mfr.#: W987D2HBJX6I TR

OMO.#: OMO-W987D2HBJX6I-TR-WINBOND-ELECTRONICS

IC DRAM 128M PARALLEL 90VFBGA
W987D2HBJX7E

Mfr.#: W987D2HBJX7E

OMO.#: OMO-W987D2HBJX7E-WINBOND-ELECTRONICS

IC DRAM 128M PARALLEL 90VFBGA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von W987D2HBJX7E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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