W987D2HBJX6E TR

W987D2HBJX6E TR
Mfr. #:
W987D2HBJX6E TR
Hersteller:
Winbond
Beschreibung:
DRAM 128M mSDR, x32, 166MHz T&R
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
W987D2HBJX6E TR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Winbond
Produktkategorie:
DRAM
Typ:
SDRAM-Mobilgerät - LPSDR
Datenbusbreite:
32 bit
Organisation:
4 M x 32
Paket / Koffer:
VFBGA-90
Speichergröße:
128 Mbit
Maximale Taktfrequenz:
166 MHz
Zugriffszeit:
6 ns
Versorgungsspannung - Max.:
1.95 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
75 mA
Minimale Betriebstemperatur:
- 25 C
Maximale Betriebstemperatur:
+ 85 C
Serie:
W987D2HB
Verpackung:
Spule
Marke:
Winbond
Montageart:
SMD/SMT
Produktart:
DRAM
Werkspackungsmenge:
2500
Unterkategorie:
Speicher & Datenspeicherung
Tags
W987D2HBJX6, W987D2, W987D, W987, W98
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC DRAM 128M PARALLEL 90VFBGA
Teil # Mfg. Beschreibung Aktie Preis
W987D2HBJX6E TR
DISTI # W987D2HBJX6ETR-ND
Winbond Electronics CorpIC DRAM 128M PARALLEL 90VFBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
  • 2500:$2.1839
W987D2HBJX6E TR
DISTI # 454-W987D2HBJX6ETR
Winbond Electronics CorpDRAM 128M mSDR, x32, 166MHz T&R0
    Bild Teil # Beschreibung
    W987D2HBJX6E

    Mfr.#: W987D2HBJX6E

    OMO.#: OMO-W987D2HBJX6E

    DRAM 128M mSDR, x32, 166MHz
    W987D2HBJX7E

    Mfr.#: W987D2HBJX7E

    OMO.#: OMO-W987D2HBJX7E

    DRAM 128M mSDR, x32, 133MHz, 65nm
    W987D2HBJX6I TR

    Mfr.#: W987D2HBJX6I TR

    OMO.#: OMO-W987D2HBJX6I-TR

    DRAM 128M mSDR, x32, 166MHz, Ind Temp T&R
    W987D2HBJX6E TR

    Mfr.#: W987D2HBJX6E TR

    OMO.#: OMO-W987D2HBJX6E-TR

    DRAM 128M mSDR, x32, 166MHz T&R
    W987D2HBJX7E TR

    Mfr.#: W987D2HBJX7E TR

    OMO.#: OMO-W987D2HBJX7E-TR

    DRAM 128M mSDR, x32, 133MHz, 65nm T&R
    W987D2HBJX6I

    Mfr.#: W987D2HBJX6I

    OMO.#: OMO-W987D2HBJX6I-WINBOND-ELECTRONICS

    IC DRAM 128M PARALLEL 90VFBGA
    W987D2HBJX6E TR

    Mfr.#: W987D2HBJX6E TR

    OMO.#: OMO-W987D2HBJX6E-TR-WINBOND-ELECTRONICS

    IC DRAM 128M PARALLEL 90VFBGA
    W987D2HBJX6E

    Mfr.#: W987D2HBJX6E

    OMO.#: OMO-W987D2HBJX6E-WINBOND-ELECTRONICS

    IC DRAM 128M PARALLEL 90VFBGA
    W987D2HBJX6I TR

    Mfr.#: W987D2HBJX6I TR

    OMO.#: OMO-W987D2HBJX6I-TR-WINBOND-ELECTRONICS

    IC DRAM 128M PARALLEL 90VFBGA
    W987D2HBJX7E

    Mfr.#: W987D2HBJX7E

    OMO.#: OMO-W987D2HBJX7E-WINBOND-ELECTRONICS

    IC DRAM 128M PARALLEL 90VFBGA
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von W987D2HBJX6E TR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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