 | | | |
| PartNumber | W987D2HBJX6I | W987D2HBJX6E | W987D2HBJX6E TR |
| Description | DRAM 128M mSDR, x32, 166MHz, Ind Temp | DRAM 128M mSDR, x32, 166MHz | DRAM 128M mSDR, x32, 166MHz T&R |
| Manufacturer | Winbond | Winbond | Winbond |
| Product Category | DRAM | DRAM | DRAM |
| Type | SDRAM Mobile - LPSDR | SDRAM Mobile - LPSDR | SDRAM Mobile - LPSDR |
| Data Bus Width | 32 bit | 32 bit | 32 bit |
| Organization | 4 M x 32 | 4 M x 32 | 4 M x 32 |
| Package / Case | VFBGA-90 | VFBGA-90 | VFBGA-90 |
| Memory Size | 128 Mbit | 128 Mbit | 128 Mbit |
| Maximum Clock Frequency | 166 MHz | 166 MHz | 166 MHz |
| Access Time | 6 ns | 6 ns | 6 ns |
| Supply Voltage Max | 1.95 V | 1.95 V | 1.95 V |
| Supply Voltage Min | 1.7 V | 1.7 V | 1.7 V |
| Supply Current Max | 75 mA | 75 mA | 75 mA |
| Minimum Operating Temperature | - 40 C | - 25 C | - 25 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Series | W987D2HB | W987D2HB | W987D2HB |
| Packaging | Tray | Tray | Reel |
| Brand | Winbond | Winbond | Winbond |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Product Type | DRAM | DRAM | DRAM |
| Factory Pack Quantity | 240 | 240 | 2500 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Winbond |
W987D2HBJX6I | DRAM 128M mSDR, x32, 166MHz, Ind Temp | |
| W987D2HBJX6E | DRAM 128M mSDR, x32, 166MHz | ||
| W987D2HBJX7E | DRAM 128M mSDR, x32, 133MHz, 65nm | ||
| W987D2HBJX6I TR | DRAM 128M mSDR, x32, 166MHz, Ind Temp T&R | ||
| W987D2HBJX6E TR | DRAM 128M mSDR, x32, 166MHz T&R | ||
| W987D2HBJX7E TR | DRAM 128M mSDR, x32, 133MHz, 65nm T&R | ||
| W987D2HBJX6I | IC DRAM 128M PARALLEL 90VFBGA | ||
| W987D2HBJX6E TR | IC DRAM 128M PARALLEL 90VFBGA | ||
| W987D2HBJX7E TR | IC DRAM 128M PARALLEL 90VFBGA | ||
| W987D2HBJX6E | IC DRAM 128M PARALLEL 90VFBGA | ||
| W987D2HBJX6I TR | IC DRAM 128M PARALLEL 90VFBGA | ||
| W987D2HBJX7E | IC DRAM 128M PARALLEL 90VFBGA |