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IXTP05N100P

IXTP05N100P
Mfr. #:
IXTP05N100P
Hersteller:
Littelfuse
Beschreibung:
MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTP05N100P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP05N100P DatasheetIXTP05N100P Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1 kV
Id - Kontinuierlicher Drainstrom:
500 mA
Rds On - Drain-Source-Widerstand:
30 Ohms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
8.1 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
50 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Produkt:
MOSFET
Serie:
IXTP05N100
Transistortyp:
1 N-Channel
Marke:
IXYS
Abfallzeit:
15 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
6 ns
Gewichtseinheit:
0.012346 oz
Tags
IXTP05, IXTP0, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
***i-Key
MOSFET N-CH 1000V 500MA TO220AB
***roFlash
Mosfet Transistor, N Channel, 6.5 A, 1 Kv, 1.6 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
***ser
Power MOSFET Transistors N-Ch 1000 V 1.6 Ohm 6.5 A SuperMESH
***icroelectronics
N-CHANNEL 1000V - 1.60Ohm - 6.5A - TO-220 - TO-220FP
***ical
Trans MOSFET N-CH 1KV 6.5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CH, 1000V, 6.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V;
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 6.5A I(D), 1000V, 1.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-CHANNEL 1000V - 3 Ohm - 3.5A - TO-220FP ZENER-PROTECTED SUPERMESH MOSFET
***roFlash
Mosfet Transistor, N Channel, 1.75 A, 1 Kv, 2.7 Ohm, 30 V, 3.75 V Rohs Compliant: Yes
***ure Electronics
N-Channel 1000 V 3.7 Ohm SuperMESH3 Power MosFet TO-220FP
***nell
MOSFET, N CH, 1KV, 3.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.75A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 2.7ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3.75V; P
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 1000V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ical
Trans MOSFET N-CH 1KV 2.5A 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
N-channel 1000V - 5.4Ohm - 2.5A - TO-220 - TO-220FP
***ure Electronics
N-channel 1000 V 6 Ohm 25 W Through Hole SuperMESH™ Power Mosfet - TO-220FP
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 1KV, 2.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F
***hard Electronics
In a Pack of 5, N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F ON Semiconductor FQPF3N80C
***Yang
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F
***ure Electronics
Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F
***enic
900V 4A 47W 4.2´Î@10V2A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220F
***ow.cn
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 800V, 6.6A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
***r Electronics
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
IXTP05N100P
DISTI # IXTP05N100P-ND		IXYS CorporationMOSFET N-CH 1000V 500MA TO-263
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$1.8700
IXTP05N100P
DISTI # 747-IXTP05N100P		IXYS CorporationMOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
RoHS: Compliant		0
  • 1:$2.4200
  • 10:$2.1900
  • 25:$1.9100
  • 50:$1.7900
  • 100:$1.7600
  • 250:$1.4300
  • 500:$1.3700
  • 1000:$1.1300
  • 2500:$0.9520
Bild Teil # Beschreibung
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Mfr.#: IXTP01N100D

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Mfr.#: IXTP02N120P

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IXTP08N120P

Mfr.#: IXTP08N120P

OMO.#: OMO-IXTP08N120P

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IXTP08N120P

Mfr.#: IXTP08N120P

OMO.#: OMO-IXTP08N120P-IXYS-CORPORATION

 MOSFET N-CH 1200V 800MA TO-220
IXTP05N100M

Mfr.#: IXTP05N100M

OMO.#: OMO-IXTP05N100M-IXYS-CORPORATION

 Darlington Transistors MOSFET 0.5 Amps 1000V
IXTP05N100

Mfr.#: IXTP05N100

OMO.#: OMO-IXTP05N100-IXYS-CORPORATION

 IGBT Transistors MOSFET 0.75 Amps 1000V 15 Rds
IXTP02N120P

Mfr.#: IXTP02N120P

OMO.#: OMO-IXTP02N120P-IXYS-CORPORATION

 IGBT Transistors MOSFET 500V to 1200V Polar Power MOSFET
IXTP08N100P

Mfr.#: IXTP08N100P

OMO.#: OMO-IXTP08N100P-IXYS-CORPORATION

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IXTP05N100P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,42 $
2,42 $
10
2,19 $
21,90 $
25
1,91 $
47,75 $
50
1,79 $
89,50 $
100
1,76 $
176,00 $
250
1,43 $
357,50 $
500
1,37 $
685,00 $
1000
1,13 $
1 130,00 $
2500
0,95 $
2 380,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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