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IXFR64N50Q3

IXFR64N50Q3
Mfr. #:
IXFR64N50Q3
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFR64N50Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXFR64N50Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFR64N50
Verpackung
Rohr
Gewichtseinheit
0.056438 oz
Montageart
Durchgangsloch
Handelsname
HyperFET
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
500 W
Anstiegszeit
250 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
45 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Widerstand
94 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
145 nC
Tags
IXFR64, IXFR6, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFR64N50Q3
DISTI # IXFR64N50Q3-ND		IXYS CorporationMOSFET N-CH 500V 45A ISOPLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		33In Stock
  • 510:$15.1200
  • 120:$17.0640
  • 30:$18.3600
  • 10:$19.9800
  • 1:$21.6000
IXFR64N50Q3
DISTI # 747-IXFR64N50Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
RoHS: Compliant		0
  • 1:$21.6000
  • 5:$20.5200
  • 10:$19.9800
  • 25:$18.3600
  • 50:$17.5800
  • 100:$17.0700
  • 250:$15.6600
  • 500:$14.9100
IXFR64N50Q3
DISTI # 8011452P		IXYS CorporationMOSFET 500V 45A Q3 HIPERFET ISOPLUS247, TU18
  • 25:£13.5900
  • 10:£14.0800
  • 5:£14.9300
Bild Teil # Beschreibung
IXFR64N60P

Mfr.#: IXFR64N60P

OMO.#: OMO-IXFR64N60P

 MOSFET DIODE Id36 BVdass600
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A
IXFR64N50P

Mfr.#: IXFR64N50P

OMO.#: OMO-IXFR64N50P

 MOSFET 500V 64A
IXFR64N50Q3

Mfr.#: IXFR64N50Q3

OMO.#: OMO-IXFR64N50Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3-IXYS-CORPORATION

 MOSFET N-CH 600V 42A ISOPLUS247
IXFR66N50Q2

Mfr.#: IXFR66N50Q2

OMO.#: OMO-IXFR66N50Q2-IXYS-CORPORATION

 MOSFET N-CH 500V 50A ISOPLUS247
IXFR64N60P

Mfr.#: IXFR64N60P

OMO.#: OMO-IXFR64N60P-IXYS-CORPORATION

 Darlington Transistors MOSFET DIODE Id36 BVdass600
IXFR64N50Q3

Mfr.#: IXFR64N50Q3

OMO.#: OMO-IXFR64N50Q3-IXYS-CORPORATION

 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
IXFR64N50P

Mfr.#: IXFR64N50P

OMO.#: OMO-IXFR64N50P-IXYS-CORPORATION

 MOSFET 500V 64A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IXFR64N50Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
22,36 $
22,36 $
10
21,25 $
212,47 $
100
20,13 $
2 012,85 $
500
19,01 $
9 505,15 $
1000
17,89 $
17 892,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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