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IXFR64N60P

IXFR64N60P
Mfr. #:
IXFR64N60P
Hersteller:
Littelfuse
Beschreibung:
Darlington Transistors MOSFET DIODE Id36 BVdass600
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFR64N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXFR64N60P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFR64N60
Verpackung
Rohr
Gewichtseinheit
0.186952 oz
Montageart
SMD/SMT
Handelsname
HyperFET
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
360 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
24 ns
Anstiegszeit
23 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
36 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
105 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
79 ns
Typische-Einschaltverzögerungszeit
28 ns
Vorwärts-Transkonduktanz-Min
63 S
Kanal-Modus
Erweiterung
Tags
IXFR64, IXFR6, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 36 A 105 mO PolarHT HiPerFET Power Mosfet - ISOPLUS-247
***ical
Trans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
***nell
MOSFET, N, ISOPLUS247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:36A; Resistance, Rds On:0.105ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOPLUS-247; Termination Type:Through Hole; N-channel Gate Charge:200nC; Power, Pd:360W; Typ Capacitance Ciss:12000pF; Voltage, Isolation:2500V; Voltage, Vds Max:600V; Rth:0.35; Time, trr Max:200ns
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFR64N60P
DISTI # V36:1790_15878443		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 1000:$8.1290
  • 500:$8.8510
  • 250:$9.6860
  • 100:$10.5040
  • 50:$10.8300
  • 25:$11.7040
  • 10:$12.5840
  • 1:$13.7130
IXFR64N60P
DISTI # IXFR64N60P-ND		IXYS CorporationMOSFET N-CH 600V 36A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$12.7797
IXFR64N60P
DISTI # 30696577		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 10:$12.5840
  • 1:$13.7130
IXFR64N60P
DISTI # 747-IXFR64N60P		IXYS CorporationMOSFET DIODE Id36 BVdass600
RoHS: Compliant		145
  • 1:$15.8900
  • 10:$14.4400
  • 25:$13.3600
  • 50:$12.2900
  • 100:$11.9900
  • 250:$10.9900
  • 500:$9.9700
IXFR64N60P
DISTI # C1S331700009007		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 50:$10.8300
Bild Teil # Beschreibung
IXFR64N60P

Mfr.#: IXFR64N60P

OMO.#: OMO-IXFR64N60P

 MOSFET DIODE Id36 BVdass600
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A
IXFR64N50P

Mfr.#: IXFR64N50P

OMO.#: OMO-IXFR64N50P

 MOSFET 500V 64A
IXFR64N50Q3

Mfr.#: IXFR64N50Q3

OMO.#: OMO-IXFR64N50Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3-IXYS-CORPORATION

 MOSFET N-CH 600V 42A ISOPLUS247
IXFR66N50Q2

Mfr.#: IXFR66N50Q2

OMO.#: OMO-IXFR66N50Q2-IXYS-CORPORATION

 MOSFET N-CH 500V 50A ISOPLUS247
IXFR64N60P

Mfr.#: IXFR64N60P

OMO.#: OMO-IXFR64N60P-IXYS-CORPORATION

 Darlington Transistors MOSFET DIODE Id36 BVdass600
IXFR64N50Q3

Mfr.#: IXFR64N50Q3

OMO.#: OMO-IXFR64N50Q3-IXYS-CORPORATION

 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
IXFR64N50P

Mfr.#: IXFR64N50P

OMO.#: OMO-IXFR64N50P-IXYS-CORPORATION

 MOSFET 500V 64A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IXFR64N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
12,19 $
12,19 $
10
11,58 $
115,84 $
100
10,97 $
1 097,42 $
500
10,36 $
5 182,25 $
1000
9,75 $
9 754,80 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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