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IRF40B207

IRF40B207
Mfr. #:
IRF40B207
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET TRENCH_MOSFETS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF40B207 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRF40B207 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
95 A
Rds On - Drain-Source-Widerstand:
3.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
68 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
83 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
170 S
Abfallzeit:
19 ns
Produktart:
MOSFET
Anstiegszeit:
35 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns
Typische Einschaltverzögerungszeit:
7.8 ns
Teil # Aliase:
SP001564728
Gewichtseinheit:
0.211644 oz
Tags
IRF40, IRF4, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 40 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - TO-220-3
***ark
MOSFET, 40V, 95A, 4.5 mOhm, 45 nC Qg, TO-220AB, TUBE
***ow.cn
Trans MOSFET N-CH Si 40V 95A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N-CH, 40V, 95A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 95A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free
IRF40B207 Single N-Channel HEXFET™ Power MOSFET
Infineon IRF40B207 Single N-Channel HEXFET™ Power MOSFET has enhanced body diode dV/dt and dl/dt capability. This MOSFET features improved gate, avalanche, and dynamic dV/dt ruggedness. The typical static drain-to-source on-resistance of this MOSFET is 3.6mΩ. This power MOSFET is RoHS compliant and also features fully characterized capacitance, and avalanche Safe Operating Area (SOA). Applications include brushed and BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, power supplies, and power switches. IRF40B207 is free from lead and halogen and is available in a TO-220AB package.
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRF40B207
DISTI # V99:2348_13890388		Infineon Technologies AGTrans MOSFET N-CH Si 40V 95A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		251
  • 2000:$0.3899
  • 1000:$0.4299
  • 500:$0.4967
  • 100:$0.5842
  • 10:$0.7189
  • 1:$0.8165
IRF40B207
DISTI # IRF40B207-ND		Infineon Technologies AGMOSFET N-CH 40V 95A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		2579In Stock
  • 1000:$0.5302
  • 500:$0.6715
  • 100:$0.8659
  • 10:$1.0960
  • 1:$1.2400
IRF40B207
DISTI # 25067031		Infineon Technologies AGTrans MOSFET N-CH Si 40V 95A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		2180
  • 2500:$0.3360
  • 1250:$0.3408
  • 500:$0.3504
  • 250:$0.3552
  • 50:$0.4224
IRF40B207
DISTI # 26198135		Infineon Technologies AGTrans MOSFET N-CH Si 40V 95A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		251
  • 100:$0.5842
  • 18:$0.7189
IRF40B207
DISTI # IRF40B207		Infineon Technologies AGTrans MOSFET N-CH 40V 95A 3-Pin TO-220 Tube - Rail/Tube (Alt: IRF40B207)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.3699
  • 5000:$0.3559
  • 8000:$0.3439
  • 15000:$0.3319
  • 30000:$0.3259
IRF40B207
DISTI # 12AC9750		Infineon Technologies AGMOSFET, N-CH, 40V, 95A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2813
  • 1:$1.0600
  • 10:$0.9000
  • 100:$0.6910
  • 500:$0.6110
  • 1000:$0.4820
  • 2500:$0.4280
IRF40B207
DISTI # 942-IRF40B207		Infineon Technologies AGMOSFET TRENCH_MOSFETS
RoHS: Compliant		4357
  • 1:$1.0600
  • 10:$0.9000
  • 100:$0.6910
  • 500:$0.6110
  • 1000:$0.4820
  • 2000:$0.4280
IRF40B207
DISTI # 2709979		Infineon Technologies AGMOSFET, N-CH, 40V, 95A, TO-220AB
RoHS: Compliant		2838
  • 1:$1.9800
  • 10:$1.7500
  • 100:$1.3900
  • 500:$1.0800
  • 1000:$0.8460
IRF40B207
DISTI # C1S322000584732		Infineon Technologies AGMOSFETs251
  • 1000:$0.8016
IRF40B207
DISTI # 2709979		Infineon Technologies AGMOSFET, N-CH, 40V, 95A, TO-220AB
RoHS: Compliant		2813
  • 5:£0.7920
  • 25:£0.7100
  • 100:£0.5450
  • 250:£0.5140
  • 500:£0.4820
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OMO.#: OMO-IS61WV5128BLL-10TLI-INTEGRATED-SILICON-SOLUTION

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DTA144ECAHZGT116

Mfr.#: DTA144ECAHZGT116

OMO.#: OMO-DTA144ECAHZGT116-ROHM-SEMI

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Mfr.#: EPP-200-24

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von IRF40B207 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,05 $
1,05 $
10
0,90 $
9,00 $
100
0,69 $
69,10 $
500
0,61 $
305,50 $
1000
0,48 $
482,00 $
2000
0,43 $
856,00 $
10000
0,41 $
4 120,00 $
25000
0,40 $
9 975,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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