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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI3447CDV-T1-GE3 DISTI # 32032582 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.3A 6-Pin TSOP T/R RoHS: Compliant | 3000 |
|
| SI3447CDV-T1-GE3 DISTI # SI3447CDV-T1-GE3TR-ND | Vishay Siliconix | MOSFET P-CH 12V 7.8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI3447CDV-T1-GE3 DISTI # SI3447CDV-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CH 12V 7.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI3447CDV-T1-GE3 DISTI # SI3447CDV-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CH 12V 7.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI3447CDV-T1-GE3 DISTI # 70616161 | Vishay Siliconix | SI3447CDV-T1-GE3 P-channel MOSFET Transistor,6.2 A,12 V,6-Pin TSOP RoHS: Compliant | 0 |
|
| SI3447CDV-T1-GE3 DISTI # 781-SI3447CDV-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3 RoHS: Compliant | 0 | |
| SI3447CDV-T1-GE3 DISTI # 8123154P | Vishay Intertechnologies | TRANS MOSFET P-CH 12V 6.3A, RL | 940 |
|
| SI3447CDVT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 7.8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI3447CDV-T1-E3 OMO.#: OMO-SI3447CDV-T1-E3 |
MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3 |
|
Mfr.#: SI3447CDV-T1-E3 OMO.#: OMO-SI3447CDV-T1-E3-VISHAY |
IGBT Transistors MOSFET 12V 7.8A 3.0W 36mohm @ 4.5V |
|
Mfr.#: SI3447CDV OMO.#: OMO-SI3447CDV-1190 |
Neu und Original |
|
Mfr.#: SI3447CDV-T1-GE3 OMO.#: OMO-SI3447CDV-T1-GE3-VISHAY |
MOSFET P-CH 12V 7.8A 6-TSOP |
|
|
Mfr.#: SI3447CDVT1GE3 OMO.#: OMO-SI3447CDVT1GE3-1190 |
Small Signal Field-Effect Transistor, 7.8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
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Mfr.#: SI3447CDV-T1-G OMO.#: OMO-SI3447CDV-T1-G-1190 |
Neu und Original |