HGT1S3N60A4DS9A

HGT1S3N60A4DS9A
Mfr. #:
HGT1S3N60A4DS9A
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 600V 17A 70W D2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S3N60A4DS9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGT1S3N60A, HGT1S3, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
PWR IGBT 7A,600V,SMPS SERIES N-CH W/DIODE TO-263AB
***ser
IGBTs 600V, N-Channel IGBT SMPS Series
***i-Key
IGBT SMPS N-CH 600V D2PAK
Teil # Mfg. Beschreibung Aktie Preis
HGT1S3N60A4DS9A
DISTI # HGT1S3N60A4DS9A-ND
ON SemiconductorIGBT 600V 17A 70W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tube
Limited Supply - Call
    HGT1S3N60A4DS9A
    DISTI # HGT1S3N60A4DS9A
    ON SemiconductorPWR IGBT 7A,600V,SMPS SERIESN-CH W/DIODE TO-263AB - Bulk (Alt: HGT1S3N60A4DS9A)
    RoHS: Compliant
    Min Qty: 200
    Container: Bulk
    Americas - 0
    • 1000:$1.4900
    • 2000:$1.4900
    • 200:$1.5900
    • 400:$1.5900
    • 600:$1.5900
    HGT1S3N60A4DS9A
    DISTI # 512-HGT1S3N60A4DS9A
    ON SemiconductorMotor / Motion / Ignition Controllers & Drivers 600V N-Channel IGBT SMPS Series
    RoHS: Compliant
    0
      HGT1S3N60A4DS9AFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant
      4713
      • 1000:$1.6500
      • 500:$1.7300
      • 100:$1.8000
      • 25:$1.8800
      • 1:$2.0200
      Bild Teil # Beschreibung
      HGT1S3N60A4DS9A

      Mfr.#: HGT1S3N60A4DS9A

      OMO.#: OMO-HGT1S3N60A4DS9A

      Motor / Motion / Ignition Controllers & Drivers 600V N-Channel IGBT SMPS Series
      HGT1S3N60A4DS9A

      Mfr.#: HGT1S3N60A4DS9A

      OMO.#: OMO-HGT1S3N60A4DS9A-ON-SEMICONDUCTOR

      IGBT 600V 17A 70W D2PAK
      HGT1S3N60A4DS9A0

      Mfr.#: HGT1S3N60A4DS9A0

      OMO.#: OMO-HGT1S3N60A4DS9A0-1190

      Neu und Original
      HGT1S3N60A4S

      Mfr.#: HGT1S3N60A4S

      OMO.#: OMO-HGT1S3N60A4S-1190

      Neu und Original
      HGT1S3N60B3DS

      Mfr.#: HGT1S3N60B3DS

      OMO.#: OMO-HGT1S3N60B3DS-1190

      - Bulk (Alt: HGT1S3N60B3DS)
      HGT1S3N60B3S

      Mfr.#: HGT1S3N60B3S

      OMO.#: OMO-HGT1S3N60B3S-1190

      Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      HGT1S3N60C3D

      Mfr.#: HGT1S3N60C3D

      OMO.#: OMO-HGT1S3N60C3D-1190

      Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-262AA
      HGT1S3N60C3DS

      Mfr.#: HGT1S3N60C3DS

      OMO.#: OMO-HGT1S3N60C3DS-1190

      Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      HGT1S3N60C3DS9A

      Mfr.#: HGT1S3N60C3DS9A

      OMO.#: OMO-HGT1S3N60C3DS9A-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von HGT1S3N60A4DS9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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