HGT1S3N60C3DS9A

HGT1S3N60C3DS9A
Mfr. #:
HGT1S3N60C3DS9A
Hersteller:
Harris Semiconductor
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGT1S3N60C3DS9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGT1S3N60C, HGT1S3, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
HGT1S3N60C3DSHarris Semiconductor6A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
RoHS: Not Compliant
585
  • 1000:$0.8400
  • 500:$0.8800
  • 100:$0.9200
  • 25:$0.9600
  • 1:$1.0300
Bild Teil # Beschreibung
HGT1S3N60A4DS9A

Mfr.#: HGT1S3N60A4DS9A

OMO.#: OMO-HGT1S3N60A4DS9A

Motor / Motion / Ignition Controllers & Drivers 600V N-Channel IGBT SMPS Series
HGT1S3N60A4DS9A

Mfr.#: HGT1S3N60A4DS9A

OMO.#: OMO-HGT1S3N60A4DS9A-ON-SEMICONDUCTOR

IGBT 600V 17A 70W D2PAK
HGT1S3N60A4DS9A0

Mfr.#: HGT1S3N60A4DS9A0

OMO.#: OMO-HGT1S3N60A4DS9A0-1190

Neu und Original
HGT1S3N60A4S

Mfr.#: HGT1S3N60A4S

OMO.#: OMO-HGT1S3N60A4S-1190

Neu und Original
HGT1S3N60B3DS

Mfr.#: HGT1S3N60B3DS

OMO.#: OMO-HGT1S3N60B3DS-1190

- Bulk (Alt: HGT1S3N60B3DS)
HGT1S3N60B3S

Mfr.#: HGT1S3N60B3S

OMO.#: OMO-HGT1S3N60B3S-1190

Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S3N60C3D

Mfr.#: HGT1S3N60C3D

OMO.#: OMO-HGT1S3N60C3D-1190

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S3N60C3DS

Mfr.#: HGT1S3N60C3DS

OMO.#: OMO-HGT1S3N60C3DS-1190

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S3N60C3DS9A

Mfr.#: HGT1S3N60C3DS9A

OMO.#: OMO-HGT1S3N60C3DS9A-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von HGT1S3N60C3DS9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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ext. Preis
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