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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGT1S3N60A4DS9A DISTI # HGT1S3N60A4DS9A-ND | ON Semiconductor | IGBT 600V 17A 70W D2PAK Min Qty: 800 Container: Tube | Limited Supply - Call | |
| HGT1S3N60A4DS9A DISTI # HGT1S3N60A4DS9A | ON Semiconductor | PWR IGBT 7A,600V,SMPS SERIESN-CH W/DIODE TO-263AB - Bulk (Alt: HGT1S3N60A4DS9A) RoHS: Compliant Min Qty: 200 Container: Bulk | Americas - 0 |
|
| HGT1S3N60A4DS9A | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 4713 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGT1S3N60A4DS9A OMO.#: OMO-HGT1S3N60A4DS9A |
Motor / Motion / Ignition Controllers & Drivers 600V N-Channel IGBT SMPS Series |
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Mfr.#: HGT1S3N60A4DS9A |
IGBT 600V 17A 70W D2PAK |
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Mfr.#: HGT1S3N60A4DS9A0 OMO.#: OMO-HGT1S3N60A4DS9A0-1190 |
Neu und Original |
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Mfr.#: HGT1S3N60A4S OMO.#: OMO-HGT1S3N60A4S-1190 |
Neu und Original |
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Mfr.#: HGT1S3N60B3DS OMO.#: OMO-HGT1S3N60B3DS-1190 |
- Bulk (Alt: HGT1S3N60B3DS) |
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Mfr.#: HGT1S3N60B3S OMO.#: OMO-HGT1S3N60B3S-1190 |
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Mfr.#: HGT1S3N60C3D OMO.#: OMO-HGT1S3N60C3D-1190 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-262AA |
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Mfr.#: HGT1S3N60C3DS OMO.#: OMO-HGT1S3N60C3DS-1190 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
|
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Mfr.#: HGT1S3N60C3DS9A OMO.#: OMO-HGT1S3N60C3DS9A-1190 |
Neu und Original |