FGA30S120P

FGA30S120P
Mfr. #:
FGA30S120P
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors Shorted AnodeTM IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA30S120P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGA30S120P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.225789 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-3P-3, SC-65-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-3P
Aufbau
Single
Leistung max
348W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
60A
Spannungs-Kollektor-Emitter-Breakdown-Max
1300V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
150A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 30A
Schaltenergie
-
Gate-Gebühr
78nC
Td-ein-aus-25°C
-
Testbedingung
-
Pd-Verlustleistung
174 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
1300 V
Kollektor-Emitter-Sättigungsspannung
2.3 V
Kontinuierlicher Kollektorstrom-bei-25-C
60 A
Gate-Emitter-Leckstrom
500 nA
Maximale Gate-Emitter-Spannung
25 V
Kontinuierlicher Kollektor-Strom-Ic-Max
60 A
Tags
FGA30, FGA3, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Shorted Anode™ Trench IGBTs
ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FGA30S120P
DISTI # V99:2348_06359130
ON SemiconductorTrans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail892
  • 5000:$2.1960
  • 2500:$2.2720
  • 1000:$2.3730
  • 500:$2.7460
  • 250:$2.9990
  • 100:$3.1410
  • 10:$3.5010
  • 1:$4.0250
FGA30S120P
DISTI # FGA30S120P-ND
ON SemiconductorIGBT 1300V 60A 348W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube
450In Stock
  • 1350:$2.5725
  • 900:$3.0503
  • 450:$3.3994
  • 10:$4.3730
  • 1:$4.8700
FGA30S120P
DISTI # 26398855
ON SemiconductorTrans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail892
  • 500:$2.7420
  • 250:$2.9939
  • 100:$3.1360
  • 10:$3.4940
  • 3:$4.0170
FGA30S120P
DISTI # FGA30S120P
ON SemiconductorTrans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA30S120P)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$2.1900
  • 900:$2.1900
  • 1800:$2.1900
  • 2700:$2.1900
  • 4500:$2.0900
FGA30S120P
DISTI # 95T0023
ON SemiconductorSA2TIGBT TO3PN 30A 1200V / TUBE0
  • 1:$5.0800
  • 10:$4.1200
  • 100:$3.4200
  • 500:$3.0900
  • 1000:$2.6300
  • 2500:$2.5100
  • 10000:$2.3700
FGA30S120P
DISTI # 512-FGA30S120P
ON SemiconductorIGBT Transistors Shorted AnodeTM IGBT
RoHS: Compliant
375
  • 1:$4.6300
  • 10:$3.9300
  • 100:$3.4100
  • 250:$3.2300
  • 500:$2.9000
FGA30S120PFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 1300V V(BR)CES, N-Channel
RoHS: Compliant
2700
  • 1000:$2.5500
  • 500:$2.6900
  • 100:$2.8000
  • 25:$2.9200
  • 1:$3.1400
FGA30S120P
DISTI # 8648789P
ON SemiconductorIGBT 1200V 30A SHORTED-ANODE TO3PN, TU204
  • 10:£3.5950
  • 40:£3.1450
  • 100:£2.9400
  • 200:£2.8050
FGA30S120P
DISTI # 8648789
ON SemiconductorIGBT 1200V 30A SHORTED-ANODE TO3PN, PK30
  • 2:£4.0800
  • 10:£3.5950
  • 40:£3.1450
  • 100:£2.9400
  • 200:£2.8050
FGA30S120P
DISTI # C1S226600774282
ON SemiconductorTrans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3PN Rail
RoHS: Compliant
892
  • 500:$2.7420
  • 250:$2.9939
  • 100:$3.1360
  • 10:$3.4940
  • 1:$4.0170
Bild Teil # Beschreibung
FGA3060ADF

Mfr.#: FGA3060ADF

OMO.#: OMO-FGA3060ADF

IGBT Transistors 600V proliferation PFC home application
FGA30T65SHD

Mfr.#: FGA30T65SHD

OMO.#: OMO-FGA30T65SHD

IGBT Transistors FS3TIGBT TO3PN 30A 650V
FGA30S120P

Mfr.#: FGA30S120P

OMO.#: OMO-FGA30S120P-ON-SEMICONDUCTOR

IGBT Transistors Shorted AnodeTM IGBT
FGA30N120FTDTU

Mfr.#: FGA30N120FTDTU

OMO.#: OMO-FGA30N120FTDTU-ON-SEMICONDUCTOR

IGBT 1200V 60A 339W TO3P
FGA30N65SMD

Mfr.#: FGA30N65SMD

OMO.#: OMO-FGA30N65SMD-ON-SEMICONDUCTOR

IGBT Transistors 650V 30A FS Planar Gen2 IGBT
FGA3065ADF

Mfr.#: FGA3065ADF

OMO.#: OMO-FGA3065ADF-1190

Neu und Original
FGA30N120ANTD

Mfr.#: FGA30N120ANTD

OMO.#: OMO-FGA30N120ANTD-1190

Neu und Original
FGA30N60

Mfr.#: FGA30N60

OMO.#: OMO-FGA30N60-1190

Neu und Original
FGA30N60UFD

Mfr.#: FGA30N60UFD

OMO.#: OMO-FGA30N60UFD-1190

Neu und Original
FGA30T65UPDT

Mfr.#: FGA30T65UPDT

OMO.#: OMO-FGA30T65UPDT-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von FGA30S120P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,14 $
3,14 $
10
2,98 $
29,78 $
100
2,82 $
282,15 $
500
2,66 $
1 332,40 $
1000
2,51 $
2 508,00 $
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