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FGA30T65SHD

FGA30T65SHD
Mfr. #:
FGA30T65SHD
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors FS3TIGBT TO3PN 30A 650V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA30T65SHD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGA30T65SHD Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3PN
Montageart:
Durchgangsloch
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
2.14 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
60 A
Pd - Verlustleistung:
238 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FGA30T65SHD
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
60 A
Marke:
ON Semiconductor / Fairchild
Gate-Emitter-Leckstrom:
400 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Gewichtseinheit:
0.225789 oz
Tags
FGA30, FGA3, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 60A 238000mW 3-Pin(3+Tab) TO-3PN Rail
***nell
FIELD STOP TRENCH IGBT, 650V/60A, TO-3PN; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 238W; Collector Emitter Voltage V(br)ceo: 6; Available until stocks are exhausted
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-3PN Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
*** Electronics
IGBT Transistors 650V 30A FS Planar Gen2 IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***el Electronic
IC REG LINEAR POS ADJ 1A TO252-5
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ure Electronics
STGP30M65DF2: 650 V 60 A 258 W Trench Gate Field-Stop IGBT - TO-220AB
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGP30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-220, 3 Pins
***nell
IGBT, SINGLE, 650V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pi
***ical
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-220 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 30 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***ical
Trans IGBT Chip N-CH 650V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***S
French Electronic Distributor since 1988
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 30A Field Stop Trench IGBT
***rchild Semiconductor
Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performancefor solar inverter , UPS and digital power generator where low conduction and switching losses are essential.
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Teil # Mfg. Beschreibung Aktie Preis
FGA30T65SHD
DISTI # V99:2348_06359719		ON Semiconductor650V FS GEN3 TRENCH IGBT439
  • 5000:$1.7290
  • 2500:$1.7880
  • 1000:$1.8710
  • 500:$2.1589
  • 250:$2.3609
  • 100:$2.4710
  • 10:$2.7740
  • 1:$3.1620
FGA30T65SHD
DISTI # FGA30T65SHD-ND		ON SemiconductorIGBT 650V 60A 238W TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		365In Stock
  • 1350:$2.0286
  • 900:$2.4053
  • 450:$2.6806
  • 10:$3.4490
  • 1:$3.8400
FGA30T65SHD
DISTI # 26983406		ON Semiconductor650V FS GEN3 TRENCH IGBT9900
  • 450:$3.6600
FGA30T65SHD
DISTI # 25845376		ON Semiconductor650V FS GEN3 TRENCH IGBT439
  • 250:$2.3609
  • 100:$2.4710
  • 10:$2.7740
  • 4:$3.1620
FGA30T65SHD
DISTI # FGA30T65SHD		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA30T65SHD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.7900
  • 900:$1.6900
  • 1800:$1.6900
  • 2700:$1.6900
  • 4500:$1.6900
FGA30T65SHD
DISTI # FGA30T65SHD		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3PN Tube (Alt: FGA30T65SHD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Asia - 0
    FGA30T65SHDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
    RoHS: Compliant    		450
    • 1000:$2.2500
    • 500:$2.3700
    • 100:$2.4700
    • 25:$2.5700
    • 1:$2.7700
    FGA30T65SHD
    DISTI # 512-FGA30T65SHD    		ON SemiconductorIGBT Transistors FS3TIGBT TO3PN 30A 650V
    RoHS: Compliant    		263
    • 1:$3.6600
    • 10:$3.1100
    • 100:$2.7000
    • 250:$2.5600
    • 500:$2.3000
    • 1000:$1.9400
    • 2500:$1.8400
    FGA30T65SHDON SemiconductorINSTOCK6433
      FGA30T65SHDON Semiconductor 7200
      • 1:$5.3100
      • 100:$3.3900
      • 500:$2.8000
      • 1000:$2.5700
      FGA30T65SHD
      DISTI # C1S541901550127      		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 238000mW 3-Pin(3+Tab) TO-3PN Tube
      RoHS: Compliant      		450
      • 250:$2.3609
      • 100:$2.4710
      • 10:$2.7740
      • 1:$3.1620
      FGA30T65SHD
      DISTI # 2781482      		ON SemiconductorFIELD STOP TRENCH IGBT, 650V/60A, TO-3PN
      RoHS: Compliant      		450
      • 1:$6.0800
      • 10:$5.4600
      • 450:$4.2500
      • 900:$3.8100
      • 1350:$3.2100
      FGA30T65SHD
      DISTI # 2781482      		ON SemiconductorFIELD STOP TRENCH IGBT, 650V/60A, TO-3PN
      RoHS: Compliant      		450
      • 1:£3.1100
      • 10:£2.3500
      • 100:£2.0500
      • 250:£1.9400
      • 500:£1.7400
      Bild Teil # Beschreibung
      FGA30N60LSDTU

      Mfr.#: FGA30N60LSDTU

      OMO.#: OMO-FGA30N60LSDTU

      		 IGBT Transistors 30A 600V N-Ch Planar
      FGA30N120FTDTU

      Mfr.#: FGA30N120FTDTU

      OMO.#: OMO-FGA30N120FTDTU

      		 IGBT Transistors 1200V 30A FS
      FGA30T65SHD

      Mfr.#: FGA30T65SHD

      OMO.#: OMO-FGA30T65SHD

      		 IGBT Transistors FS3TIGBT TO3PN 30A 650V
      FGA30S120P

      Mfr.#: FGA30S120P

      OMO.#: OMO-FGA30S120P-ON-SEMICONDUCTOR

      		 IGBT Transistors Shorted AnodeTM IGBT
      FGA30N65SMD

      Mfr.#: FGA30N65SMD

      OMO.#: OMO-FGA30N65SMD-ON-SEMICONDUCTOR

      		 IGBT Transistors 650V 30A FS Planar Gen2 IGBT
      FGA30N60LSDTU

      Mfr.#: FGA30N60LSDTU

      OMO.#: OMO-FGA30N60LSDTU-ON-SEMICONDUCTOR

      		 IGBT Transistors 30A 600V N-Ch Plana
      FGA304638G

      Mfr.#: FGA304638G

      OMO.#: OMO-FGA304638G-1190

      		 Neu und Original
      FGA30N120

      Mfr.#: FGA30N120

      OMO.#: OMO-FGA30N120-1190

      		 Neu und Original
      FGA30N120A

      Mfr.#: FGA30N120A

      OMO.#: OMO-FGA30N120A-1190

      		 Neu und Original
      FGA30N120FTD

      Mfr.#: FGA30N120FTD

      OMO.#: OMO-FGA30N120FTD-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      263
      Auf Bestellung:
      2246
      Menge eingeben:
      Der aktuelle Preis von FGA30T65SHD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      3,65 $
      3,65 $
      10
      3,10 $
      31,00 $
      100
      2,69 $
      269,00 $
      250
      2,55 $
      637,50 $
      500
      2,29 $
      1 145,00 $
      1000
      1,93 $
      1 930,00 $
      2500
      1,83 $
      4 575,00 $
      5000
      1,76 $
      8 800,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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